AS7C1025B-15TJCNTR Allicdata Electronics
Allicdata Part #:

AS7C1025B-15TJCNTR-ND

Manufacturer Part#:

AS7C1025B-15TJCNTR

Price: $ 1.52
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC SRAM 1M PARALLEL 32SOJ
More Detail: SRAM - Asynchronous Memory IC 1Mb (128K x 8) Paral...
DataSheet: AS7C1025B-15TJCNTR datasheetAS7C1025B-15TJCNTR Datasheet/PDF
Quantity: 1000
1000 +: $ 1.38174
Stock 1000Can Ship Immediately
$ 1.52
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 1Mb (128K x 8)
Write Cycle Time - Word, Page: 15ns
Access Time: 15ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-BSOJ (0.300", 7.62mm Width)
Supplier Device Package: 32-SOJ
Description

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The AS7C1025B-15TJCNTR is a type of non-volatile memory that offers a variety of advantages in a wide variety of applications. This memory is a flash memory that can store data even when power is removed. Its ability to store data with low power consumption and a long data retention time make it suitable for a range of applications. The AS7C1025B-15TJCNTR is used in a variety of contexts, including data logging, code execution, and more.

The AS7C1025B-15TJCNTR is a three-way cell size that comes with a sector architecture. It packs 4,196 bits per cell, allowing it to store 15 times more data than a standard flash memory. This is better suited to applications where more data needs to be stored, such as data logging. This memory also has a wide range of features, such as low power consumption, fast write speeds, and support for multiple operating systems.

The working principle of the AS7C1025B-15TJCNTR is based on the tunneling effect. The data is stored using a tunneling effect by a charge trap cell, which allows electrons to tunnel from one region to another. This affords the AS7C1025B-15TJCNTR with the data retention features, as well as low power consumption. In addition, the write speeds are also faster than those of other types of memories. This is due to the structure of the tunnel, which allows more electrons to cross at any given time. This high write speed makes the AS7C1025B-15TJCNTR well-suited to applications that require frequent rewriting, such as code execution.

The AS7C1025B-15TJCNTR is a versatile memory, and is suitable for a wide range of applications. These include environments that require high temperature and humidity, as well as low power consumption. In addition, the AS7C1025B-15TJCNTR is suitable for applications requiring high speeds and data logging. It is also well-suited to code execution, allowing for fast read and write speeds. Overall, the AS7C1025B-15TJCNTR offers a great deal of flexibility and performance in a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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