AS7C31026C-12BINTR Allicdata Electronics
Allicdata Part #:

AS7C31026C-12BINTR-ND

Manufacturer Part#:

AS7C31026C-12BINTR

Price: $ 1.60
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC SRAM 1M PARALLEL 48BGA
More Detail: SRAM - Asynchronous Memory IC 1Mb (64K x 16) Paral...
DataSheet: AS7C31026C-12BINTR datasheetAS7C31026C-12BINTR Datasheet/PDF
Quantity: 1000
1500 +: $ 1.45564
Stock 1000Can Ship Immediately
$ 1.6
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 1Mb (64K x 16)
Write Cycle Time - Word, Page: 12ns
Access Time: 12ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-LFBGA
Supplier Device Package: 48-BGA (7x7)
Description

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Introduction

The AS7C31026C-12BINTR is a high-speed, high-density memory device manufactured by Advantech. It is used primarily in portable digital devices, including smartphones, tablets, digital cameras, and GPS navigation systems. It stores and retrieves data quickly and reliably, with low power consumption and small package size. It works in conjunction with an external memory controller.

Application Field

The AS7C31026C-12BINTR is designed for embedded systems that need a high-speed and high-density memory device. Its small form factor and low power consumption make it ideal for applications that require high performance in a small package. It is well-suited for use in portable digital devices such as smartphones, tablets, digital cameras, and GPS navigation systems. It is also used in industrial automation systems and automotive applications.

Working Principle

The AS7C31026C-12BINTR is a synchronous dynamic random-access memory (SDRAM). It is composed of an array of ultra high-speed dynamic RAM cells, which are organized into rows and columns. Each memory cell stores a single binary bit of information. In order to read or write data, the memory cells must be accessed sequentially. This is done by supplying commands and address information to the memory controller. Once the address information has been supplied, the memory device sends out a read or write command. Once the data has been written, the memory device sends out a busy signal to the controller, which indicates that the data has been read or written.

Conclusion

The AS7C31026C-12BINTR is a high-speed, high-density memory device that is ideal for embedded systems. Its small form factor and low power consumption make it a great choice for portable digital devices. It works in conjunction with a memory controller to read and write data, and it is composed of an array of ultra-high-speed dynamic RAM cells. It is well-suited for use in a variety of applications, including smartphones, tablets, digital cameras, GPS navigation systems, industrial automation systems, and automotive applications.

The specific data is subject to PDF, and the above content is for reference

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