AS7C256B-15JIN

AS7C256B-15JIN is a low-power, high-speed SRAM memory memory device developed by Alliance Memory Inc. This device is a CMOS 256K-bit static memory device consisting of 512Kx8 bits. It adopts 3.3V single-sheet power supply design, high speed: read cycle time is 15ns, and can achieve industrial temperature range of -40°C to +85°C. AS7C256B-15JIN provides an asynchronous read and write. This device is suitable for a variety of applications.

Application Field of AS7C256B-15JIN

AS7C256B-15JIN is widely used in a variety of applications such as notebook/desktop computer, cellular/smart phone, automotive, industrial/military/security. Applications of this memory device include code storage, image/audio/video storage and system access. In addition, because this device is reliable and durable under extreme temperature, it is an ideal choice for harsh environments. Data communication and communication equipment also need the device to store data and deploy applications.

Working Principle of AS7C256B-15JIN

The AS7C256B-15JIN is composed of power, control and signal terminals. The power terminal supplies VDD and VSS power source for the chip, and the VPP terminal is used for write operation. Control terminal is composed of chip select (CS/CSB/CSEN), write enable signal (WE/WEN), output enable signal (OE/OEN). The signal terminal IO0~IO7 is used to transmit and receive data. All signal directions are bidirectional.

When the voltage on the power terminal increases to the threshold voltage (V DD- Vth) of the device, the device is in standby mode. When a certain signal is added to the control terminal, the AS7C256B-15JIN can enter the working mode. When writing, the CS/CSB/CSEN signal is low and WE/WEN and OE/OEN are stepped high. Write data is transferred to IO0~IO7 signal line and stored in the corresponding memory cell. When reading, CS/CSB/CSEN signal is low and OE/OEN is stepped high and WE/WEN is stepped low. Read data is output from IO0~IO7 signal line.

Conclusion

The AS7C256B-15JIN is a low-power, high-speed SRAM memory memory device developed by Alliance Memory Inc. It is widely used in a variety of applications such as notebook/desktop computer, cellular/smart phone, automotive, industrial/military/security. Its working principle is that when a certain signal is added to the control terminal, the AS7C256B-15JIN can enter the working mode, and write and read data is transmitted through signal lines. Therefore, AS7C256B-15JIN provides a cost-effective and reliable solution for data storage and system access requirements.