AS7C1025C-15JIN

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The AS7C1025C-15JIN is a low-power, low-voltage device specialized for memory applications. It is a unique form of digital memory, a type of semiconductor memory that stores digital data using transistors, also known as Chameleon Modules (CAMs). It is manufactured by Micron Semiconductor Products and offers a range of advantages over other types of storage solutions.

The AS7C1025C-15JIN is based on the CMOS SRAM process and offers the advantage of very low power consumption. This enables it to provide long-term storage solutions with excellent performance and low power consumption, in applications such as automotive, medical, industrial, and consumer.
The device is surface mountable and is available in a variety of package options, including an SOIC-8, TSOP-16, and BGA-32. Its small size enables manufacturers and designers to incorporate it into many applications that require a high level of integration and a reduced form factor. This makes it ideal for applications that require accurate, reliable digital storage.

The AS7C1025C-15JIN has the unique ability to read and write data in real-time. This enables it to store data as frequent as every 250ns, making it ideal for applications such as video and audio processing. It also features a wide range of operational voltages, so it can be used in applications requiring multiple voltages.

Another great feature of the AS7C1025C-15JIN is the fact that it supports a register-based synchronous access. This means that the device can be programmed remotely, allowing users to easily adjust the operating parameters of the device. This makes it easier to manage and control data, eliminating the need to constantly monitor the device.

The AS7C1025C-15JIN has a wide range of applications, including embedded systems and industrial controls. It is designed to provide long-term reliable memory, which enables applications such as pressure sensing, sensor data logging, image processing, and machine vision. In addition, it is also suitable for use in high-speed modular systems, such as graphic cards and digital signal processors.

The AS7C1025C-15JIN uses static random access memory (SRAM) as its data storage method. It employs a set of semiconductor devices known as “fuse-links”, which are formed by a series of transistors and associated capacitive devices. The SRAM cells store each bit of data as a charge on a capacitor, and the operation of the device is based on the principle of electrical currents, enabling it to store data in digital form.

The AS7C1025C-15JIN is an ideal device for providing storage solutions in applications where reliability and low power consumption are essential. Its small form factor and wide range of operational voltages make it suitable for use in a variety of applications, and its register-based synchronous access enables easy management of the device. Its use of SRAM as its primary data storage method also contributes to its durability and reliability, making it a preferred solution for memory applications.

The specific data is subject to PDF, and the above content is for reference