AS7C1026B-15JINTR Allicdata Electronics
Allicdata Part #:

AS7C1026B-15JINTR-ND

Manufacturer Part#:

AS7C1026B-15JINTR

Price: $ 1.58
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC SRAM 1M PARALLEL 44SOJ
More Detail: SRAM - Asynchronous Memory IC 1Mb (64K x 16) Paral...
DataSheet: AS7C1026B-15JINTR datasheetAS7C1026B-15JINTR Datasheet/PDF
Quantity: 1000
1000 +: $ 1.43109
Stock 1000Can Ship Immediately
$ 1.58
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 1Mb (64K x 16)
Write Cycle Time - Word, Page: 15ns
Access Time: 15ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-BSOJ (0.400", 10.16mm Width)
Supplier Device Package: 44-SOJ
Description

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Memory technology is a major area of application and progress in electronics, computing and communication technology. The AS7C1026B-15JINTR is a very important component in this field. It is a synchronous dynamic random access memory (SDRAM) and comes in an 8-Pin Plastic "Dual In-line Memory Module" (DIMM) format. The widely used 280-pin DDR2 1.8V SDRAM-DIMM provides improved performance, power and efficiency, which marks the further development of memory technology.

The primary application of the AS7C1026B-15JINTR is to replace the original SDRAM, to shorten the time consuming process of data searching and to reduce bottlenecks in the process of general computing. In addition, this new type of memory can help to reduce the power consumption and increase the speed of data search, communication and computing. Since the contact area between module and slot is increasde, yielding a better resilience and stability.

The working principle of the AS7C1026B-15JINTR can be divided into two parts, the first one is about how the data stored and read, and the second one is what makes the chip unique to other memory technology. The first part can be explained as follows, once the data is input to the chip, it will be stored in a particular primary memory, the SDRAM. This SDRAM has a number of internal structures to distinguish it from other memory chips, such as a row decoder, a sense amplifier, and a row buffer. The row decoder is responsible for translating the address into the row and column on the physical chip and activating the row by sending an activate signal. The sense amplifier then confirms that the data in the row buffer matches the read data. If it does, the read operation is successful and the date is written to the memory. If the data doesn\'t match, the read operation will be terminated because a read failure has occurred.

The other distinct characteristic of the AS7C1026B-15JINTR is its ability to use multiple banks. This is due to its unique embedded multi-instruction sequencer. With this capability, the chip can intelligently process various types of instructions simultaneously, thus improving the system performance. This is possible because the instructions can be spread across multiple banks at the same time, resulting in faster execution and more efficient memory management. This is an important advantage that has made this technology desirable for many consumer and enterprise applications.

To summarize, the AS7C1026B-15JINTR is an advanced synchronous dynamic random access memory (SDRAM) chip that is integrated into a 280-pin DDR2 1.8V SDRAM-DIMM format. This chip is designed to replace the original SDRAM, resulting in improved performance, power management and efficiency. In addition, the chip\'s embedded multi-instruction sequencer makes it possible to process multiple instructions simultaneously, thus increasing the overall system performance. It is no surprise that the AS7C1026B-15JINTR has become the standard for many consumer and enterprise applications.

The specific data is subject to PDF, and the above content is for reference

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