AS7C1026B-12JCN

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AS7C1026B-12JCN is a type of memory device which can provide efficient storage capacity and guidance for various industry applications. As such, this type of device has many applications in our daily life. In this article, we will discuss in detail the application field and working principle of the AS7C1026B-12JCN.

The AS7C1026B-12JCN is an 8 megabyte (Mb) DRAM which is integrated into a 25-pin DIP package. This form factor allows the device to be installed into a variety of system architectures. One of the key features of the AS7C1026B-12JCN is its high speed 108MHz access time. This provides the system with a high performance level suitable for Graphical User Interface (GUI) applications. In addition, the device also provides a low power operation and advanced refresh capability.

In terms of its application field, the AS7C1026B-12JCN is widely used in the memory field. It is suitable for personal computers, servers, high-end workstations, embedded systems and consumer electronics. This device can be used as the main memory of high-end systems, providing powerful storing power to the system. It is also popular to be used as a cache in the memory hierarchy, taking advantage of its speed and low latency.

In addition, the AS7C1026B-12JCN also finds its application in consumer electronics for its low power operation feature. This feature can be utilized by consumer electronics to extend the battery life of the device. This feature makes AS7C1026B-12JCN memory a popular choice for gaming, entertainment and mobile applications.

In terms of its working principle, the AS7C1026B-12JCN consists of an array of 8 million bits of data stored in the form of two-bit cells. This two-bit cell array is divided into 8 banks of 896K x 2 bits. All the 8 banks have independent addressing and control signals, providing the user with extended flexibility. The AS7C1026B-12JCN also supports fast Page Mode and Burst Mode memory access. In Page Mode, data can be fetched back or written to the memory address in one single clock cycle, providing a higher speed read/write operations. Burst Mode, on the other hand, allows the memory to fetch back multiple data, allowing for faster data transfer than Page Mode.

In addition, the two-bit cell also enables the device to provide readability during power fail functions. For example, during power fail, the device will store the data in its two-bit cell and will continue to recover the data once power is resumed.

In conclusion, the AS7C1026B-12JCN is a highly effective storage and guidance device which can be applied to many memory application fields. It is a powerful device which provides a high performance, low power operation and advanced refresh capability. Its application field can be further extended by its support of fast Page Mode and Burst Mode memory access. In addition, the device also has readability during power fail features. All of these features make the AS7C1026B-12JCN a sought after device for many embedded systems, consumer electronics and personal computers.

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