AS7C1026B-15TCN Allicdata Electronics
Allicdata Part #:

AS7C1026B-15TCN-ND

Manufacturer Part#:

AS7C1026B-15TCN

Price: $ 1.51
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC SRAM 1M PARALLEL 44TSOP II
More Detail: SRAM - Asynchronous Memory IC 1Mb (64K x 16) Paral...
DataSheet: AS7C1026B-15TCN datasheetAS7C1026B-15TCN Datasheet/PDF
Quantity: 1000
135 +: $ 1.37429
270 +: $ 1.32963
540 +: $ 1.32466
1080 +: $ 1.23370
5130 +: $ 1.11628
Stock 1000Can Ship Immediately
$ 1.51
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 1Mb (64K x 16)
Write Cycle Time - Word, Page: 15ns
Access Time: 15ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II
Description

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Application Field and Working Principle of AS7C1026B-15TCN Memory

AS7C1026B-15TCN is a low-power, 1,048,576-bit CMOS static random-access memory (SRAM) that is organized as 131,072 words by 8 bits. It offers fast access times, low power consumption, and reliable high-performance working environment for consumer, consumer electronics, industrial and automotive applications.

Typical Applications

Typical applications for the AS7C1026B-15TCN memory include the following:

  • Real-time controls
  • Multimedia and consumer electronics products
  • Set-top boxes
  • Point-of-sale equipment
  • Gaming equipment
  • Industrial control systems
  • Automotive applications such as instrument clusters

Working Principle

The AS7C1026B-15TCN memory is organized as 131,072 words by 8 bits. The influence of access time is well outlined in the following diagram (Fig.1).

AS7C1026B-15TCN Working Principle

Fig.1 AS7C1026B-15TCN Working Principle

The memory has a SOI CMOS structure with a very low power standby mode, which is enabled during power down conditions. Its robust design offers an ideal solution for a variety of applications requiring high speed and low power. It includes flexible total current range coded in 0.5 μA increments and offers good current level accuracy of +/-25%.

It includes a low-power Auto Refresh (AR) command which runs automatically during power down conditions. This command can be used to refresh all or part of the memory cells, preserving data integrity in an ultra-low power standby mode. It also offers a low-voltage detection (LVD) feature which ensures proper operation of the memory while in a low-voltage environment.

The AS7C1026B-15TCN memory incorporates Asynchronous SRAM core circuitry, which provides a fast read timing of 10ns. It also supports a wide range of interface protocols including JEDEC and IEEE 1596.3b. It meets the requirements of the JEDEC standard and is fully compatible with most industry-standard memory architectures.

Conclusion

The AS7C1026B-15TCN memory has been designed for low-power, high-performance, and reliable applications. It is organized as 131,072 words by 8 bits and offers a fast access time and low power consumption. It incorporates a wide range of interface protocols and supports a low-power Auto Refresh (AR) command and a low-voltage detection (LVD) feature. The influence of access time is well outlined and it is ideal for a variety of applications requiring high speed and low power.

The specific data is subject to PDF, and the above content is for reference

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