AS7C1026B-20TCN Allicdata Electronics
Allicdata Part #:

AS7C1026B-20TCN-ND

Manufacturer Part#:

AS7C1026B-20TCN

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC SRAM 1M PARALLEL 44TSOP II
More Detail: SRAM - Asynchronous Memory IC 1Mb (64K x 16) Paral...
DataSheet: AS7C1026B-20TCN datasheetAS7C1026B-20TCN Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 1Mb (64K x 16)
Write Cycle Time - Word, Page: 20ns
Access Time: 20ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II
Description

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Memory plays an important role in a computer system. It is used to store data and instructions for the processor to access and perform calculations. AS7C1026B-20TCN is a non-volatile high-speed memory device which is widely used in modern high-speed applications. The device is a low-power, 3V operation, 1.0 μ? single-transistor access Static Random Access Memory (SRAM).

The AS7C1026B-20TCN is designed for an array of applications in telecommunications, consumer electronics, instrumentation and many other areas. It offers high-speed, low power operation and a deep, low power standby mode. In addition, it has a wide operating temperature range (-40°C to 85°C) which makes it suitable for use in harsh environments.

The working principle behind the device is based on the SRAM architecture. SRAM utilizes a simple memory familiar design, where two transistors and two capacitors are connected together to form a memory cell. The two transistors act as the charge control gates, while the capacitors store the data through their charge states. To read a memory cell, the contents of the cell are sensed by comparing the voltage of the two capacitors. To write to a memory cell, the appropriate voltage is applied to the control gates, which control the capacitors’ charge state to store either a one or a zero.

The AS7C1026B-20TCN utilizes a 16K x 16 design, with a word width of 16 bits and a data rate of 20 MHz. The device is capable of access times of 40 ns and cycle times of 50 ns. It can also operate at temperatures of up to 85°C and it is available in a 20-pin plastic surface mount package.

The AS7C1026B-20TCN is a highly efficient, low-power memory device which can be used in a wide range of applications. It is most commonly used in systems which require high-speed memory access with low power consumption and it is available in a number of different packages to suit different applications.

The specific data is subject to PDF, and the above content is for reference

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