AS7C1026C-15JIN Allicdata Electronics
Allicdata Part #:

1450-1199-5-ND

Manufacturer Part#:

AS7C1026C-15JIN

Price: $ 1.81
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC SRAM 1M PARALLEL 44SOJ
More Detail: SRAM - Asynchronous Memory IC 1Mb (64K x 16) Paral...
DataSheet: AS7C1026C-15JIN datasheetAS7C1026C-15JIN Datasheet/PDF
Quantity: 1000
160 +: $ 1.64871
256 +: $ 1.64258
512 +: $ 1.58208
1008 +: $ 1.50415
Stock 1000Can Ship Immediately
$ 1.81
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 1Mb (64K x 16)
Write Cycle Time - Word, Page: 15ns
Access Time: 15ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-BSOJ (0.400", 10.16mm Width)
Supplier Device Package: 44-SOJ
Description

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The AS7C1026C-15JIN is a type of low-power Static Random Access Memory (SRAM) with a capacity of 256 Kbits. It is a nonvolatile memory, meaning that it does not need power to retain data. This makes it suitable for applications that do not require frequent data updates, such as the storing of video files or audio data. The AS7C1026C-15JIN is constructed using semiconductor technology, allowing the device to be highly integrated and miniaturized.

The AS7C1026C-15JIN has a typical access time of 72 nanoseconds and features an asynchronous interface. This allows the SRAM to be controlled using a microcontroller or other type of computer chip. The device is designed to operate at supply voltages of 1.7V to 3.3V and has an operating temperature range of 0°C to 70°C.

The AS7C1026C-15JIN can be used in a wide range of applications, from embedded systems to automotive and aerospace applications. The device is also ideal for applications where size and power consumption are a concern, such as wearable technology, medical equipment, RFID tags, and electronic devices. Additionally, the AS7C1026C-15JIN is well-suited for use in consumer electronics products, due to its small size, low power consumption, and high integration.

The AS7C1026C-15JIN operates based on the principle of SRAM. SRAM is a type of memory in which each cell stores a single bit of data. Data is stored in the memory cells using transistors that pass an electrical current or “bit voltage” when the cell is charged. The charging and discharging of the capacitors create a two-state logic system, in which data is read as a HIGH or LOW voltage.

The AS7C1026C-15JIN performs reads and writes using a multiplexed address and data bus scheme. The device can be connected to a controller via the multiplexed address and data lines, which are used for the transmission of both the address and the data sent to and from the device. This allows for data to be read from and written to the memory in a fraction of the time that would be required if the address and data lines were separate.

The AS7C1026C-15JIN offers many advantages over other types of integrated circuits and memory. Not only can it store data reliably, it also does so quickly, with a typical access time of 72 nanoseconds. Additionally, the device is highly integrated, resulting in a small size and low power consumption. The AS7C1026C-15JIN, therefore, is well-suited for a variety of applications, from consumer electronics to embedded systems.

The specific data is subject to PDF, and the above content is for reference

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