AS7C256A-20JINTR Allicdata Electronics
Allicdata Part #:

AS7C256A-20JINTR-ND

Manufacturer Part#:

AS7C256A-20JINTR

Price: $ 1.19
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC SRAM 256K PARALLEL 28SOJ
More Detail: SRAM - Asynchronous Memory IC 256Kb (32K x 8) Para...
DataSheet: AS7C256A-20JINTR datasheetAS7C256A-20JINTR Datasheet/PDF
Quantity: 1000
1000 +: $ 1.08565
Stock 1000Can Ship Immediately
$ 1.19
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 256Kb (32K x 8)
Write Cycle Time - Word, Page: 20ns
Access Time: 20ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 28-BSOJ (0.300", 7.62mm Width)
Supplier Device Package: 28-SOJ
Description

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Memory Application Field and Working Principle of AS7C256A-20JINTR

The AS7C256A-20JINTR is a 256 Kbit CMOS non-volatile static RAM. It has a low power CMOS static RAM with a 256Kbit of memory organized internally as 32K words by 8-bits. The AS7C256A-20JINTR is fabricated using high-performance CMOS process and is available in space-saving packages, such as J-lead pin-counts, which enables it to be applied in memory applications where power consumption, space and cost are critical considerations.

This AS7C256A-20JINTR is often used in memory backup applications and has several advantages over traditional backup techniques, such as the option of obtaining thousands of years of data retention with very low power consumption. It can also be used as a stand-alone memory or as a component in a larger system. It is also versatile in its application with the ability to support several types of bus protocols, such as multiplexed address/data buses, and several additional features, such as ready/busy and write-protect control.

Working principle of the AS7C256A-20JINTR is based on the galvanic element, which is a dynamic memory cell that consists of two transistors/diodes. This element has two states, and the state of each cell is determined by the charge stored in its capacitance. When a stored bit is a zero, the dynamic cell is in high state; and when a stored bit is a one, the dynamic cell is in low state. Data stored in the dynamic cell is the result of application of an instruction, write or read pulses. During read operations, the stored data is read via a sensing mechanism and presented at the output of the memory cell.

The AS7C256A-20JINTR features a built-in automatic write detection and write protect circuitry, as well as address masking that allows multiple devices to share one address and data bus. The device also allows for a page mode with several additional instructions, such as page write and page read, that can be used to manipulate the data stored in a page. This effectively decreases the average access time, while increasing the overall performance of the memory device.

The AS7C256A-20JINTR is also shielded from external noise and other EMI (electromagnetic interference) sources due to its high-frequency RAS/CAS multiplexing circuit. This ensures that the information stored in the device is secure and free from interference.

In conclusion, the AS7C256A-20JINTR is a versatile and reliable CMOS non-volatile static RAM that provides a cost effective alternative for memory applications where power consumption, space and cost are critical considerations. It features a robust architecture and has the flexibility to support several bus protocols, as well as page mode instructions, with low power consumption and high noise immunity. It is designed for reliability, providing thousands of years of data retention and is ideal for memory backup applications.

The specific data is subject to PDF, and the above content is for reference

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