AS7C31025B-12TJIN Allicdata Electronics
Allicdata Part #:

1450-1298-ND

Manufacturer Part#:

AS7C31025B-12TJIN

Price: $ 1.69
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC SRAM 1M PARALLEL 32SOJ
More Detail: SRAM - Asynchronous Memory IC 1Mb (128K x 8) Paral...
DataSheet: AS7C31025B-12TJIN datasheetAS7C31025B-12TJIN Datasheet/PDF
Quantity: 1000
220 +: $ 1.53918
264 +: $ 1.48916
506 +: $ 1.48362
1012 +: $ 1.38174
5016 +: $ 1.25023
Stock 1000Can Ship Immediately
$ 1.69
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 1Mb (128K x 8)
Write Cycle Time - Word, Page: 12ns
Access Time: 12ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-BSOJ (0.300", 7.62mm Width)
Supplier Device Package: 32-SOJ
Description

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The AS7C31025B-12TJIN is a type of memory device that can be used in many different applications. It is a 1025 Megabit (1 Gigabit) device with a JEDEC-compatible 3.3-Volt interface. This memory device is designed for use in embedded systems and applications, and provides fast and reliable access to data stored in it. It can be used in applications that require fast data access, such as automotive, industrial, and medical, among others.

The AS7C31025B-12TJIN memory device has a number of features that make it very useful in embedded applications. It has an asynchronous interface, which means that it can be configured to access data without any external clocking. This makes it an ideal solution for embedded systems where timing is critical. The device also features error correction, which helps to ensure that the data accessed is accurate and reliable. The device also features burst write and read modes, which allow for faster access to data.

In terms of the working principle, the AS7C31025B-12TJIN memory device makes use of a type of semiconductor technology known as Dynamic Random Access Memory (DRAM). DRAM is a type of memory that stores data in small electrical capacitors. These capacitors can store data up to a certain voltage, and then power down when this voltage is exceeded. This allows the device to quickly and reliably access data. The device also makes use of Static Random Access Memory (SRAM) which is a type of semiconductor technology that stores data in a non-volatile manner, meaning that the contents of the device will remain the same even when the power is shut off.

The AS7C31025B-12TJIN memory device is a valuable addition to any embedded system or application. Its fast access time, reliable data access, and error correction make it an ideal solution for applications that require fast access to data. In addition, its asynchronous interface and burst write/read modes allow for faster data access and more reliable operation. With the many features and capabilities the AS7C31025B-12TJIN memory device provides, it is a great choice for any embedded system or application.

The specific data is subject to PDF, and the above content is for reference

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