AS7C31025C-10TJINTR Allicdata Electronics
Allicdata Part #:

AS7C31025C-10TJINTR-ND

Manufacturer Part#:

AS7C31025C-10TJINTR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC SRAM 1M PARALLEL 32SOJ
More Detail: SRAM - Asynchronous Memory IC 1Mb (128K x 8) Paral...
DataSheet: AS7C31025C-10TJINTR datasheetAS7C31025C-10TJINTR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 1Mb (128K x 8)
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-BSOJ (0.300", 7.62mm Width)
Supplier Device Package: 32-SOJ
Description

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AS7C31025C-10TJINTR is a kind of memory that is widely used today.

The memory is a non-volatile memory device that is used to store data and instructions in an electronic system. It stores data in an electronic form and when power is applied, these data is easily accessible as opposed to other types of storage such as hard drives, which require a physical media to store the data. This memory is widely used in various electronic systems, ranging from small embedded systems to larger enterprise systems.

The AS7C31025C-10TJINTR has a wide range of applications. It is used in the automotive industry to store data in the navigation system, paint app, and for navigation systems in large trucks. It is also used in robotics for control systems as well as to store program code for automated manufacturing and other industrial operations. In addition, it is also used in medical devices to store patient history and medical records.

In terms of working principle, non-volatile memories are composed of a series of cells formed by transistors, capacitors, and resistors. These cells are arranged in a certain number of rows and columns, and when power is applied, a select field-effect transistor (FET) is used to activate one cell, which in turn can store an individual bit of data. As soon as the transistor is turned off, the data stored in the cell will not be lost and will remain the same until the power is reapplied.

The AS7C31025C-10TJINTR memory is known for its low power consumption, high speed, and reliable performance. Its low power consumption allows it to be used in embedded systems where power consumption is an important factor. Its high speed allows it to store data faster than other types of storage, and its reliability ensures that data stored in the memory is not lost even when power is no longer present. This makes it ideal for use in mission critical systems, where data integrity is critical.

In conclusion, the AS7C31025C-10TJINTR is a versatile and reliable non-volatile memory that is widely used in various applications. It is known for its low power consumption, high speed, and reliable performance, and is ideal for mission critical systems where data integrity is important. It is also used in embedded systems and robots as well as in medical devices.

The specific data is subject to PDF, and the above content is for reference

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