AS7C31026B-12TCN Allicdata Electronics
Allicdata Part #:

1450-1054-ND

Manufacturer Part#:

AS7C31026B-12TCN

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC SRAM 1M PARALLEL 44TSOP II
More Detail: SRAM - Asynchronous Memory IC 1Mb (64K x 16) Paral...
DataSheet: AS7C31026B-12TCN datasheetAS7C31026B-12TCN Datasheet/PDF
Quantity: 162
Stock 162Can Ship Immediately
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 1Mb (64K x 16)
Write Cycle Time - Word, Page: 12ns
Access Time: 12ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II
Description

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AS7C31026B-12TCN is a type of memory device and is widely used in many different application fields. Its working principle is based on the principle of charge-coupled device (CCD) and its operation is achieved through semiconductor technology. In essence, it stores and retrieves data from its memory cells through the use of a series of transistors.

AS7C31026B-12TCN’s memory cells are divided into two types: Non-Volatile Memory (NVM) and Volatile Memory (VM). NVM stores the data permanently even when the system is turned off. On the other hand, VM stores the data temporarily while being powered, but when the power is lost, all stored data is gone. Both types of memory devices have their own merits and can be used for different application purposes.

In terms of working principle, the core process of AS7C31026B-12TCN’s operation is based on the so-called precharge principle. In this process, each memory cell of the device is designed to has two transistor sections: Write Line and Read Line. During the write operation, incoming data from the external source is adaptively precharged along the Write Line and then stored to the corresponding memory cells; During the read operation, the stored data is read out of the memory cells along the Read Line, and simultaneously the precharged level is restored.

In addition, AS7C31026B-12TCN is also designed with a built-in watchdog timer, which can monitor the system peripherals and reset the device when any abnormal situation is identified. This detailed design approach can help reduce the risk of data corruption and ensure the data reliability.

AS7C31026B-12TCN is mainly used in complete embedded systems, such as secure authentication, wireless communication equipments, portable media players and in medical devices, where secure storage and retrieval of data are highly valued. Its performance can be further optimized by implementing extra Intel 186 microcontroller, which can control various parameters of the memory device.

In conclusion, AS7C31026B-12TCN is one of the most popular memory device in current market and its working principle based on CCD is highly reliable. This memory device is widely applicable in different application fields and its built-in watchdog timer can effectively minimize the data corruption risk.

The specific data is subject to PDF, and the above content is for reference

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