AS7C31026B-12TCNTR

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Memory Type:	Volatile
Memory Format:	SRAM
Technology:	SRAM - Asynchronous
Memory Size:	1Mb (64K x 16)
Write Cycle Time - Word, Page:	12ns
Access Time:	12ns
Memory Interface:	Parallel
Voltage - Supply:	3 V ~ 3.6 V
Operating Temperature:	0°C ~ 70°C (TA)
Mounting Type:	Surface Mount
Package / Case:	44-TSOP (0.400", 10.16mm Width)
Supplier Device Package:	44-TSOP II

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AS7C31026B-12TCNTR is a powerful 256K-bit high-capacity CMOS Static Random Access Memory (SRAM) device developed by Alliance Semiconductor Corporation. It is the first device from the family of low-voltage, ultra-high-speed, high-capacity Static Random Access Memory (SRAM) device series. As a high-speed, low-power memory, AS7C31026B-12TCNTR is optimal for various data storage and transfer applications.The device is constructed from SRAM cells arranged in a 512-cell by 256-cell array. The cells are connected by transmission paths which allow data to be accessed quickly and reliably. Each cell has four transistors that are controlled via an input gate. Each cell is capable of storing a 16-bit data word which can be read and written simultaneously. This allows the device to store information in multiple registers which can be accessed simultaneously.In addition, the AS7C31026B-12TCNTR uses a CMOS process to ensure that the power is supplied efficiently and that data is stored reliably. The device is designed to require only a low voltage to operate and to dissipate very low power. The device operates at speeds of up to 60MHz and has a wide range of operating temperatures from 0°C to 70°C.The AS7C31026B-12TCNTR is ideal for applications that require high-volume data transfer and storage. These applications include servers, networking systems, embedded system control, memory image planes, and large databases. In addition, the device is also suited for small systems such as portable media players and personal digital assistants (PDAs).The AS7C31026B-12TCNTR device allows for reliable data storage and fast data transfer speeds. This device is equipped with industry-standard features such as a fast-read capability, a low standby current, and EDC/ECC. Additionally, the device features a synchronous-write capability, while the write-buffer configuration allows users to write multiple bytes at the same time. This reduces total power consumption and improves system performance.The device also employs a two-wire serial interface which supports both synchronous and asynchronous data transfers. This enables data transfer rates up to 66Mb/s and facilitates data sharing between processors. The device supports multiple burst lengths which makes it suitable for accessing large amounts of data quickly. Furthermore, the device’s flexible addressing scheme enables multiple devices to be connected together in a system, making it a great choice for high-density memory systems. Finally, the AS7C31026B-12TCNTR device has a hierarchical bus architecture which allows for easy expansion and reconfiguration of the system. This allows multiple devices to be connected in a system, while the device can be used to extend the memory capacity. This means that the device can be used in a variety of applications and can adapt to the system’s changing environment.The AS7C31026B-12TCNTR is a reliable and powerful device for data storage and transfer applications. Its wide range of features makes it an excellent choice for high-performance memory applications. With its flexible addressing scheme and hierarchical bus architecture, the device is perfect for high-capacity memory solutions. Furthermore, its low power consumption makes it an optimal choice for portable media players, PDAs, and other low-power applications.

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