AS7C31026B-20TCN

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Memory

AS7C31026B-20TCN is a 32 megabit pseudo SRAM, which is mainly used in memory devices. It is a high-speed Static Random Access Memory based on a single-transistor structure and uses a synchronous interface to transfer data.

Application field

AS7C31026B-20TCN is mainly used in communications equipment, consumer electronic products, office equipment and other electronic products. It meets the requirements of high speed and large capacity for a variety of electronic equipment, such as mobile phones, digital cameras, servers and so on.

It is suitable for a variety of computing and data processing applications such as cellular baseband processing, program storage, and multimedia applications. Its ultra-wide data bus enables high system performance. As a result, it can provide faster memory access and higher system efficiency.

Working principle

The AS7C31026B-20TCN is a pseudo SRAM, with a single-transistor structure and a synchronous interface. It uses a 512-bit dual port read/write memory bank with a 16-bit data bus to transfer data. Its input/output current is 8 mA, making it suitable for many high-performance applications.

It uses a three-state output buffer. This allows users to control the data output of each memory location through the control signals CLK and CS. The device also supports burst and page modes for faster data transfer. The burst mode allows for data to be transmitted or received in continuous blocks, while the page mode allows for multiple data words to be read from the memory in one access.

The chip includes a self-reset function, which is activated when the power is turned on. The self-reset function ensures a reset of the chip in order to access the pseudo SRAM. It also offers a wide operating temperature of -55C to 125C, making it suitable for harsh environments.

All these features make AS7C31026B-20TCN an ideal solution for a variety of memory applications, providing a reliable and high performance memory component.

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