AS7C31026C-10BIN Allicdata Electronics
Allicdata Part #:

1450-1132-ND

Manufacturer Part#:

AS7C31026C-10BIN

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC SRAM 1M PARALLEL 48BGA
More Detail: SRAM - Asynchronous Memory IC 1Mb (64K x 16) Paral...
DataSheet: AS7C31026C-10BIN datasheetAS7C31026C-10BIN Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 1Mb (64K x 16)
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-LFBGA
Supplier Device Package: 48-BGA (7x7)
Description

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Memory: AS7C31026C-10BIN Application Field and Working Principle

AS7C31026C-10BIN is a 3.3V 256K x 16 CMOS low-power Static RAM. It is a non-volatile memory device, and its storage mechanism works using two different states of electrical charge that originate from flush 4,194,304 bits of data. Even if the power supply is cut off, the data is non-volatile. It is available in 44-Lead TSOP package.

AS7C31026C-10BIN is one of the most widely used memories in personal computer and embedded applications, as it is inexpensive and easy to use. This type of RAM is used in applications such as cache memory, scratch pad memory, data buffers, program memory and configuration memory. It is also used for system boot-up programs and diagnostic codes.

The working principle of the AS7C31026C-10BIN RAM is based on the same principle of charge-coupled devices (CCDs) used in digital cameras. A CCD is a device that is made up of an array of transistors. Each transistor is connected to an individual bit of data in the RAM. When a data bit is written to the memory, an electrical charge is applied to the CCD transistor that corresponds to that bit, allowing it to store the data. When a data bit is read, the charge is released and the data bit is retrieved. This process is repeated for each bit of data that is read and written in the memory.

The AS7C31026C-10BIN is designed to offer low power consumption, fast access times and high speed operation. It also has built-in error detection and correction capabilities, making it ideal for applications where data integrity is critical. Its power consumption is lower than that of SRAMs, making it more suitable for portable and notebook computers. Additionally, its lower power consumption and faster cycle times make it more suitable for applications requiring high speed operation and fast access times such as video systems and graphics controllers.

The AS7C31026C-10BIN memory is both reliable and cost-effective, making it an ideal memory for memory expansion and other applications requiring low power consumption and fast access times. Its power consumption and speed make it perfect for a wide range of embedded and real-time applications, and its built-in error detection and correction capabilities ensure that data remains secure. The AS7C31026C-10BIN is an ideal choice for both consumer and industrial applications.

The specific data is subject to PDF, and the above content is for reference

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