AS7C31026C-12TIN Allicdata Electronics
Allicdata Part #:

1450-1218-5-ND

Manufacturer Part#:

AS7C31026C-12TIN

Price: $ 2.23
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC SRAM 1M PARALLEL 44TSOP II
More Detail: SRAM - Asynchronous Memory IC 1Mb (64K x 16) Paral...
DataSheet: AS7C31026C-12TIN datasheetAS7C31026C-12TIN Datasheet/PDF
Quantity: 254
1 +: $ 2.02230
10 +: $ 1.81755
26 +: $ 1.78896
52 +: $ 1.78411
104 +: $ 1.59414
260 +: $ 1.54236
520 +: $ 1.53660
1014 +: $ 1.43109
Stock 254Can Ship Immediately
$ 2.23
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 1Mb (64K x 16)
Write Cycle Time - Word, Page: 12ns
Access Time: 12ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Today’s devices are multifunctional and compact and they require high performance memory to do its job with ease and preciseness. AS7C31026C-12TIN is a product from Alliance Memory which offers a high-performance 256Kbit burst mode asynchronous SRAM which has minimum cycle time and low power consumption. AS7C31026C-12TIN combines low power consumption and minimum cycle time which makes it preferred memory choice for data logging systems, audio processing units, industrial controllers, imaging systems, PDAs and other consumer applications.

AS7C31026C-12TIN is a 256Kbit burst mode asynchronous SRAM which is designed to operate with low power consumption at VCC = 2.3V to 3.6V and with a minimum cycle time at 25ns (max). It is capable of providing faster data access during operation and consumes 2mW. The chip comes with 3-state and 5-volt tolerant TTL compatible I/O. It is available in a space-saving 50-pin TSOP-I package.

The principle that AS7C31026C-12TIN uses is called synchronous dynamic random access memory (SDRAM). SDRAM is a type of RAM used for high-speed data storage and retrieval. The chip contains a clock generator, an address buffer and a data buffer which can be used for multiple operations. It can also store large amounts of data and allow for fast access.

The AS7C31026C-12TIN application field includes data logging systems, audio processing units, industrial controllers, imaging systems, PDAs, RF receivers and other consumer applications. The chip provides higher speed, better data access and lower power consumption compared to other memory chips. It can operate at clock speed of 200MHz and it has very strong burst-mode capabilities.

The chip contains an 8K-byte SRAM array which is divided into two independent banks and can perform multiple operations. The chip also has an asynchronous design to reduce clock cycles and maximize performance. It can also be used to store and retrieve data simultaneously in two banks.

AS7C31026C-12TIN also comes with built-in power management and low power operation. It can operate in any power mode from 2.3V to 3.6V and has an automatic power-down mode for further reduction in power consumption. It also includes built-in redundancy for reliable operation.

AS7C31026C-12TIN is a high performance 256Kbit burst mode asynchronous SRAM from Alliance Memory which is ideal for data logging systems, audio processing units, industrial controllers, imaging systems, PDAs, RF receivers and other consumer applications. With its low power consumption and minimum cycle time, it is fast becoming one of the preferred memory choices for many applications.

The specific data is subject to PDF, and the above content is for reference

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