AS7C316096C-10TINTR Allicdata Electronics
Allicdata Part #:

AS7C316096C-10TINTR-ND

Manufacturer Part#:

AS7C316096C-10TINTR

Price: $ 10.89
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC SRAM 16M PARALLEL 44TSOP II
More Detail: SRAM - Asynchronous Memory IC 16Mb (2M x 8) Parall...
DataSheet: AS7C316096C-10TINTR datasheetAS7C316096C-10TINTR Datasheet/PDF
Quantity: 1000
1000 +: $ 9.90010
Stock 1000Can Ship Immediately
$ 10.89
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 16Mb (2M x 8)
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II
Description

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AS7C316096C-10TINTR, which falls into the category of Memory, is a high density non-volatile SRAM that supports programmer access. It is available in a standard TSOP or WSDIP package, offering maximum frequencies of 45 MHz. This device provides low power consumption, long data retention and fast write times, all in a highly dense package.

The AS7C316096C-10TINTR Memory is a fast asynchronous SRAM that offers access times of 45ns. It is ideally suited for applications that require high data retention times and fast write/read times. The device offers 8 banks of 8K words each, with a total capacity of 64KB per package. In addition, the device supports byte, word and page operations, allowing for efficient memory access.

This device operates using a single voltage supply 16 VDD and ground, and features a programmable read rate ranging from 25 MHz to 45MHz. It also features a special 8-bit input/output port that allows for faster operation. This device also features a write enable signal (WE#) that can be programmed via the WE#N pin, allowing for enhanced control over write operations. Other features include a power failure enable pin (PS#) for automatic detection of power outages.

In terms of applications, the AS7C316096C-10TINTR is ideally suited for a range of industrial, consumer, military and automotive applications. It can be used in applications that require high-density, fast access and low power consumption. It can also be used to store data in critical applications, ensuring that the data is retained even in the event of power outages.

Finally, the working principle of the AS7C316096C-10TINTR is fairly straightforward. The device consists of an internal array of cells, organized into 8 8K words. The device supports byte, word, and page operations to facilitate efficient access. When an instruction is sent through the data pins, it is stored in an internal register. From there, it is sent to the different banks to perform the requested operation. Data is then stored in the internal cells, and is read back when required.

To conclude, the AS7C316096C-10TINTR is a high-density non-volatile SRAM that supports programmer access. It is available in a standard TSOP or WSDIP package, and offers maximum frequencies of 45 MHz. It is suitable for a range of industrial, consumer, military and automotive applications that require high-density, fast access times and low power consumption. Its working principle relies on an internal array of cells, which store data in the event of an instruction being sent through the data pins.

The specific data is subject to PDF, and the above content is for reference

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