AS7C32096A-12TINTR Allicdata Electronics
Allicdata Part #:

AS7C32096A-12TINTR-ND

Manufacturer Part#:

AS7C32096A-12TINTR

Price: $ 2.41
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC SRAM 2M PARALLEL 44TSOP II
More Detail: SRAM - Asynchronous Memory IC 2Mb (256K x 8) Paral...
DataSheet: AS7C32096A-12TINTR datasheetAS7C32096A-12TINTR Datasheet/PDF
Quantity: 1000
1000 +: $ 2.18345
Stock 1000Can Ship Immediately
$ 2.41
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 2Mb (256K x 8)
Write Cycle Time - Word, Page: 12ns
Access Time: 12ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II
Description

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The AS7C32096A-12TINTR is a memory device that is typically used in a variety of applications. It is a high-density, low-power memory designed for use in microprocessor-based systems. This device has been designed specifically for systems that require large amounts of data storage or retrieval, such as cellular base stations, digital video cameras, wireless access points, and other embedded systems.

The working principle of the AS7C32096A-12TINTR is based on its ability to store information in the form of bits. Bits are the smallest unit of data, and the bits stored in the AS7C32096A-12TINTR can be arranged and accessed in different ways. This allows the device to provide a wide variety of different services, depending on the application in which it is being used.

The AS7C32096A-12TINTR is designed for use in several types of applications, including dynamic random access memory (DRAM), static random access memory (SRAM), Flash memory, and non-volatile memory (NVM). Each of these types of memory has different characteristics, and some are better suited for certain applications. For example, DRAM is often used in applications that need high speed, such as routers and servers, while NVM is typically used for data storage in embedded systems.

The AS7C32096A-12TINTR is designed with a sophisticated architecture that helps maximize performance and reduce power consumption. This architecture includes a high-speed circular queue, an address decoder, a data bus buffer, an error correction logic, and other features that allow the device to store and access large amounts of data quickly and efficiently. This makes it ideal for use in applications that require large amounts of data processing.

One of the key features of the AS7C32096A-12TINTR is its low-power operation. Low-power operation is achieved through the use of advanced power-saving features, such as dynamic voltage scaling and clock gating. These features allow the device to save energy by operating only when needed. For example, when the device is idle it can be put into a low-power state, where it consumes very little power. This makes the AS7C32096A-12TINTR an ideal choice for applications that require low-power operation and high performance.

The AS7C32096A-12TINTR is an ideal choice for applications that require high-density, low-power memory solutions. Its advanced architecture and low-power capabilities make it well-suited for a range of applications, from cellular base stations and digital video cameras to wireless access points and embedded systems. Its ability to store and access large amounts of data quickly and efficiently make it an excellent choice for applications that require large amounts of data processing.

The specific data is subject to PDF, and the above content is for reference

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