AS7C32098A-10TINTR Allicdata Electronics
Allicdata Part #:

AS7C32098A-10TINTR-ND

Manufacturer Part#:

AS7C32098A-10TINTR

Price: $ 2.41
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC SRAM 2M PARALLEL 44TSOP II
More Detail: SRAM - Asynchronous Memory IC 2Mb (128K x 16) Para...
DataSheet: AS7C32098A-10TINTR datasheetAS7C32098A-10TINTR Datasheet/PDF
Quantity: 1000
1000 +: $ 2.18345
Stock 1000Can Ship Immediately
$ 2.41
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 2Mb (128K x 16)
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

AS7C32098A-10TINTR is a type of memory that can be used in a wide range of applications and provides a cost efficient solution to memory storage problems. Its fascinating working principle allows it to operate efficiently in a variety of operating temperatures and environments, making it a trusted option for many applications.

AS7C32098A-10TINTR is mainly used for portable electronic devices, such as laptops, PDAs, cameras, and other memory intensive applications. It is a type of NOR-based non-volatile flash memory, which means that once the power is shut off, the contents of the memory are not lost.

The most remarkable feature of AS7C32098A-10TINTR is its fast read and write speed. It features access speeds of up to 100 nanoseconds, which makes it ideal for applications that require rapid response. It also provides a high capacity capacity and comes in various densities ranging from 128k to 8 Mbits.

The working principle of AS7C32098A-10TINTR is based on the Fowler-Nordheim tunneling effect. In this effect, electrons are tunneled through a thin oxide layer and transferred between the source and drain. This mechanism allows the memory device to be operated in temperature ranges from -40 to 85°C and in environments with humidity levels up to 95%.

AS7C32098A-10TINTR is a great choice for applications that require reliable, high-capacity memory. Its tunneling effect allows it to operate in a wide range of temperatures and environments, and its rapid access speed makes it suitable for use in multimedia and other high-performance applications. All these features make AS7C32098A-10TINTR an attractive option for many electronic devices.

The specific data is subject to PDF, and the above content is for reference

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