AS7C3256A-15TINTR

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The AS7C3256A-15TINTR is a 256K x16 Pipelined Asynchronous SRAM (Static Random Access Memory), organized as 16Mbits. It is a department-specific memory that can be used within specific application fields. The device features a 3.0 ns access time to memory cells, producing 35 MBps throughput. This, combined with its “pipelined flow control,” maximizes system effectiveness by requiring fewer clock cycles per read or write. The device incorporates various individual control signals along with eight address, eight data and eight global control signals for full control of the AS7C3256A-15TINTR.

The AS7C3256A-15TINTR can be used in a wide variety of applications, including high-performance military systems, aerospace systems, medical imaging, lasers, and industrial test equipment. Its wide operating voltage of two to two and a half volts makes it well-suited for space-saving applications, allowing for a high power-to-space ratio. The device also offers a wide temperature operating range (-55° C to +125° C) and is also available in a plastic package (AS7C3256A-15TINR), which has improved performance in high-temperature applications and dissipates heat more efficiently.

A key feature of the AS7C3256A-15TINTR is its asynchronous operating mode, which eliminates the need for a separate clock. This is accomplished through the use of control signals that determine the timing of the various operations. The read and write operations are initiated by a single read/write control signal (RWW) and a transmission enable signal (TENB). The RWW signal is joined by an address enable signal (ABE) and an output enable signal (OEB) to control the flow of data in and out of the chip. When the RWW signal is active, the address enable signal (ABE) sends an enable signal to the address bus, allowing for access of the desired address. The output enable signal (OEB) then allows for the data to be placed on the data bus.

In addition to its ultra-fast access time, the AS7C3256A-15TINTR’s pipelined flow control is another key feature. In this mode, the data is transferred in a three-phase operation consisting of a precharge phase, an access phase and a postcharge phase. During the precharge phase, the memory cells are briefly charged in order to prepare them for the subsequent access phase. During the access phase, the desired data is read or written to the memory cells. Finally, during the postcharge phase, the memory cells are again charged in order to maintain their contents across the entire access cycle.

In conclusion, the AS7C3256A-15TINTR is a versatile and reliable asynchronous Static Random Access Memory that is well-suited for a variety of military, aerospace, and medical applications. Its key features include its ultra-fast access time and straightforward pipelined flow control that provides efficient data transfer. This makes the device a great choice for space-saving and high-performance applications.

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