AS7C3256A-20JCNTR

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A S7C3256A-20JCNTR (hereafter referred to as “the device”) is a 256K bit static random-access memory (SRAM) device developed by Samsung Semiconductor. It is categorized as a Memory device. The device is a high-speed CMOS SRAM fabricated using heavily doped processes, and offers low power consumption, high-speed random access, and high endurance.

The device features a 22-bit address bus connected to an array of 256K bits of memory organized in 8,192 words of 32 bits each. There is also a control bus allowing for 5 bits of instruction, which can include a write command and an output enable command, helping to reduce the external components and interface logic when used. It has a total 5V power supply, providing better stability and less EMI compared to devices with lower voltage levels. It is also designed to be used in harsh environmental conditions, with a wide operating temperature range from -40°C to +85°C.

The device works according to the principle of static random access. This principle operates by constantly refreshing the charge of the memory cells during a write or read cycle. The cell refresh principle uses the same energy to read out any false or corrupted memory contents, thus maintaining the contents of the memory. This is done by internally generating pulses to refresh the cells just before they can be accessed by the user.

The device is suitable for use in applications where low-power consumption and high reliability is required, such as in network devices, communication modules, industrial controllers, and automotive applications. It provides an ideal solution for high-performance systems by offering fast read and write access times. The device can be used as cache memory, data registers, look-up tables, translation buffers and more.

The device can also be used for translating addresses in memory misalignment cases, such as when executing instructions from flash memory, which is commonly encountered in embedded-system applications. The device’s configuration enables it to interface with external memory directly, thus providing easy integration and design flexibility.

It is also used in applications such as non-volatile memory (NVM) where the contents are not lost when power is removed. The device is capable of detecting and recovering from double bit errors, thus making it ideal for use in mission-critical applications where repetitive power cycling is expected.

Overall, the AS7C3256A-20JCNTR device is an ideal choice for applications needing reliable storage. The low power consumption and wide operating temperature range, combined with its fast read and write access times, make it suitable for use in a wide range of applications. The device also has a range of configurable features, making integration and design flexibility easier.

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