AS7C34096A-12JINTR Allicdata Electronics
Allicdata Part #:

AS7C34096A-12JINTR-ND

Manufacturer Part#:

AS7C34096A-12JINTR

Price: $ 2.65
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC SRAM 4M PARALLEL 36SOJ
More Detail: SRAM - Asynchronous Memory IC 4Mb (512K x 8) Paral...
DataSheet: AS7C34096A-12JINTR datasheetAS7C34096A-12JINTR Datasheet/PDF
Quantity: 1000
500 +: $ 2.40951
Stock 1000Can Ship Immediately
$ 2.65
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mb (512K x 8)
Write Cycle Time - Word, Page: 12ns
Access Time: 12ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 36-BSOJ (0.400", 10.16mm Width)
Supplier Device Package: 36-SOJ
Description

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AS7C34096A-12JINTR is a 1M x 16 bit, Pipelined Fast Cycle Static Random Access Memory (SRAM). All devices are fabricated using 0.25μm CMOS technology. The device features an asynchronous 4-word burst architecture, which can be used to transfer data to and from the device.

The AS7C34096A-12JINTR is organized as 16Mbits arranged as 1,048,576 words by 16 bits. The device is capable of operating with a cycle time of 9.7 ns at a 5V power supply. The device also features an asynchronous 4-word burst architecture which can be used to transfer data to and from the device.

The AS7C34096A-12JINTR has an asynchronous interface, data are read and written on the falling edges of R/W# and !WE#. When R/W# is low and !WE# is high, data transfer from the memory to I/O pins. When R/W# is high, !WE# is low, data transfer from I/O pins to the memory array. Internal signal OE# active high when !CE# is low. When OE#is high and I/O driven become tristate.

The AS7C34096A-12JINTR is designed to meet various requirements for high-speed, low-power, and multi-voltage operation. It also provides extremely low power consumption in comparison with equivalent densities. The device supports a wide range of operating frequencies from 133MHz to 200MHz. It also has three different power supply options that can be used including single 3V, 1.8V and 1.2V. It has a power-down mode which reduces standby power to less than 1uW.

The AS7C34096A-12JINTR is an ideal device for applications requiring low power, high speed, and wide temperature range. It is suitable for use in high-performance, high-bandwidth, low-latency memory systems such as 3D graphics processing, high-performance computing, large-scale data processing, and real-time medical imaging. The device is also suitable for a variety of other embedded applications such as image recognition, robotics control, defence and aerospace.

In terms of working principle, the AS7C34096A-12JINTR is a SRAM device, which means that data is stored in a form of a charge on internal circuit accumulated on the capacitor. When the power is switched on, the capacitor will discharge and hence all the data will be lost. Therefore, the power is always maintained on for the SRAM in order to preserve the data stored in it. It is also an asynchronous device, which means that the R/W# and !WE# signals control the read and write operations independently of the device clock.

Overall, the AS7C34096A-12JINTR provides excellent performance and low power consumption in various memory systems and embedded applications. Its asynchronous design allows for high speed and flexibility while its wide range of operating frequencies provides compatibility with a wider range of systems and protocols. This makes the AS7C34096A-12JINTR an ideal choice for a wide variety of applications.

The specific data is subject to PDF, and the above content is for reference

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