AS7C34096A-12TIN Allicdata Electronics
Allicdata Part #:

AS7C34096A-12TIN-ND

Manufacturer Part#:

AS7C34096A-12TIN

Price: $ 2.87
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC SRAM 4M PARALLEL 44TSOP II
More Detail: SRAM - Asynchronous Memory IC 4Mb (512K x 8) Paral...
DataSheet: AS7C34096A-12TIN datasheetAS7C34096A-12TIN Datasheet/PDF
Quantity: 1000
135 +: $ 2.60605
270 +: $ 2.59632
540 +: $ 2.50070
1080 +: $ 2.37753
Stock 1000Can Ship Immediately
$ 2.87
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mb (512K x 8)
Write Cycle Time - Word, Page: 12ns
Access Time: 12ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II
Description

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AS7C34096A-12TIN Memory
AS7C34096A-12TIN is a kind of memory that is quite popular nowadays. It is an integrated circuit, which is designed for low-power, low-voltage, low-frequency applications and offers superior performance compared to other memory types. The device is from the family of Advanced Macrocell products from the manufacturer, and the memory is available in different densities ranging from 32 kilobytes to 128 megabytes.

This device is mainly used for supporting code, data and other multimedia applications. It provides a reliable voltageless memory for these applications, enabling efficient operation for a wide range of embedded systems. Because of its small size, it can also be used as a replacement for large, bulky flash memory.

The most common application of AS7C34096A-12TIN memory is in embedded systems. Examples include cellular phones and other mobile devices, industrial controllers, and embedded government systems. The device offers superior performance and reliability compared to other memory types, making it an ideal choice for these applications.

The working principle of AS7C34096A-12TIN memory is based on dynamic RAM (DRAM) technology. The memory is composed of memory cells, which are arranged in a regular addressing matrix. These cells store the data and the addresses are generated from the addressing matrix. The information stored in the memory cells is accessed by a system bus, which is also used by the processor for communication with the memory.

The memory cells are connected to the system bus by various data lines. Each cell consists of a capacitive element, which stores the data for a certain amount of time. The DRAM memory uses a clock signal (CLK) to maintain the integrity of the data, and a refresh signal (REFRESH) to keep the data in the memory cells up-to-date. The data is accessed by the system bus when the processor requests it.

AS7C34096A-12TIN memory is a reliable, high-speed, and low-voltage memory solution. Its combination of low power consumption and superior performance makes it a great choice for embedded applications. This memory has a wide variety of applications in today\'s embedded systems, and provides a flexible, reliable and low-cost solution.

The specific data is subject to PDF, and the above content is for reference

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