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Introduction

The AS7C3513B-12TCNTR is a 256-kB static random access memory (SRAM) that has been designed by Adesto for use in handheld and embedded memory applications, such as automotive, medical, and consumer and industrial electronics markets. The device is composed of an advanced nonvolatile 20nm 4T-SRAM cell that offers a degree of nonvolatility and features faster read and write performance than a traditional 16-k or 32-k static RAM cell, while providing the same or better 5-V operating range.

Features

This SRAM has a wide range of features that make it highly suitable for many different applications. The AS7C3513B-12TCNTR offers a relaxed write performance with fast read access times, low power consumption, robust low-voltage operation, and the ability to operate in down to 2.2V with a standby current of 350nA. It is also capable of operating in temperatures ranging from -55 to +125 degrees Celsius. Additionally, the device includes an 8-bit-wide per-byte write enable and features both an active-low write enable and an active-high write disable for improved system flexibility.

Application

The AS7C3513B-12TCNTR is ideal for embedded applications that require fast, nonvolatile memory. In automotive applications it can be used for mission-critical systems such as engine control and powertrain systems, as well as for instrument panels, infotainment systems, and telematics. The device is also well suited for industrial applications, including motor control and factory automation, as well as consumer devices such as cellular phones and gaming systems. Additionally, the device can be used in medical devices such as defibrillators and cardiac pacemakers.

Working Principle

At the heart of the AS7C3513B-12TCNTR is a 4T-SRAM cell composed of a single MOSFET with the two storage nodes tied to a single VCC power rail. This allows the bit to reach the same logic level without the need for an additional pull up or pull down resistor. The cell also features a nonvolatile data latch that can hold the data for up to 10 years with no external power. This latch is activated when the chip power is lost and the data stored is not affected. When power is restored, the data stored in the latch is automatically restored to the bit cells, ensuring preservation of data even in the event of power loss.

Conclusion

The AS7C3513B-12TCNTR is an advanced 256-kB static random access memory (SRAM) from Adesto that is highly suitable for many different applications. It is composed of an advanced nonvolatile 20nm 4T-SRAM cell that offers a degree of nonvolatility and features faster read and write performance than a traditional 16-k or 32-k static RAM cell, while providing the same or better 5-V operating range. The device is ideal for embedded applications that require fast, nonvolatile memory, and has the ability to preserve data in the event of a power loss.

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