Allicdata Part #: | AT25P1024W10SI2.7-ND |
Manufacturer Part#: |
AT25P1024W1-10SI-2.7 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Microchip Technology |
Short Description: | IC EEPROM 1M SPI 2.1MHZ 20SOIC |
More Detail: | EEPROM Memory IC 1Mb (128K x 8) SPI 2.1MHz 20-SOI... |
DataSheet: | AT25P1024W1-10SI-2.7 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | EEPROM |
Technology: | EEPROM |
Memory Size: | 1Mb (128K x 8) |
Clock Frequency: | 2.1MHz |
Write Cycle Time - Word, Page: | 5ms |
Memory Interface: | SPI |
Voltage - Supply: | 2.7 V ~ 5.5 V |
Operating Temperature: | -40°C ~ 85°C (TC) |
Mounting Type: | Surface Mount |
Package / Case: | 20-SOIC (0.295", 7.50mm Width) |
Supplier Device Package: | 20-SOIC |
Base Part Number: | AT25P1024 |
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The AT25P1024W1-10SI-2.7 is a type of memory that has a number of useful applications and a specific operating principle. It is an important memory device used in a variety of electronics products and embedded systems. In this article, we will explore the application field and working principle of AT25P1024W1-10SI-2.7 memory.
The AT25P1024W1-10SI-2.7 is a static random access memory (SRAM) device, which has a high-speed, nonvolatile memory structure, with a density of 1Mb (one megabyte). This type of memory is often used in systems that require low-latency access and write speed, such as data servers, portable devices, embedded systems and industrial automation systems. It is also used in applications that require frequent access to small data blocks and requires lower power consumption. This type of memory is also suitable for applications that need to store or frequently access large data files.
The specific working principle of the AT25P1024W1-10SI-2.7 memory module is based on static random access memory (SRAM). It is a volatile memory device and works on the principle of ‘static’, meaning that it stores data as long as power is applied to the device. This type of memory is composed of multiple SRAM cells, arranged in a row and column structure. Each cell contains two transistors and a capacitive element. The row and column lines act as select and write/read signals for the particular cell. When a write or read cycle is initiated, the address signals are decoded to select a particular row and column in the chip. When the cell is selected, the data can then be written to or read from the device.
The AT25P1024W1-10SI-2.7 memory module is ideally suited to applications that need low-latency access and write speeds, such as embedded systems and industrial automation systems. It also has an extremely low power consumption, which makes it suitable for applications that need to store or frequently access large data files with low energy usage. In addition, it also has a good data integrity and reliability, as data stored in the memory module will not be lost due to a power loss or other fault.
In conclusion, the AT25P1024W1-10SI-2.7 is a type of static random access memory (SRAM) device that has a wide range of applications and a specific working principle. This type of memory has many advantages, such as low power consumption, good data integrity, and fast access and write speeds. It is an important memory device used in a variety of electronics products and embedded systems.
The specific data is subject to PDF, and the above content is for reference
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