AT25XE021A-SSHN-T Integrated Circuits (ICs) |
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| Allicdata Part #: | 1265-1140-2-ND |
| Manufacturer Part#: |
AT25XE021A-SSHN-T |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Adesto Technologies |
| Short Description: | IC FLASH 2M SPI 70MHZ 8SOIC |
| More Detail: | FLASH Memory IC 2Mb (256K x 8) SPI 70MHz 8-SOIC |
| DataSheet: | AT25XE021A-SSHN-T Datasheet/PDF |
| Quantity: | 1000 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Memory Type: | Non-Volatile |
| Memory Format: | FLASH |
| Technology: | FLASH |
| Memory Size: | 2Mb (256K x 8) |
| Clock Frequency: | 70MHz |
| Write Cycle Time - Word, Page: | 8µs, 5ms |
| Memory Interface: | SPI |
| Voltage - Supply: | 1.65 V ~ 3.6 V |
| Operating Temperature: | -40°C ~ 85°C (TC) |
| Mounting Type: | Surface Mount |
| Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package: | 8-SOIC |
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The AT25XE021A-SSHN-T is a nonvolatile Electrically Erasable Programmable Read-Only Memory (EEPROM). It has a total memory capacity of 32Kbits with a 2Kbit page size and can write up to 6Kbit in a single write cycle. This type of memory is often used in applications where reliable data storage is required, such as in embedded controllers, communication devices and consumer electronics.
The AT25XE021A-SSHN-T can be used in a variety of applications, such as automotive, industrial, consumer and consumer medical, depending on the requirements of the specific application. It is highly reliable, with a cyclic noise figure of 15,000 and a maximum write endurance of 500,000 cycles. The AT25XE021A-SSHN-T is capable of supporting a wide range of operating voltages, from 1.8V to 5.5V, and is compatible with a variety of other systems, including I2C, SPI, QPI and SOT-23.
The AT25XE021A-SSHN-T utilizes a Static RAM (SRAM) cell array as its main memory, with an on-chip Flash Memory (Flash) EPROM controller that allows for data storage and retrieval. The flash controller manages the data transfer between the SRAM cell array and the non-volatile EPROM. The on-chip controller also provides protection features, such as write protection, ECC, CRC check and independent power-on reset capabilities.
The AT25XE021A-SSHN-T has a number of benefits, such as a fast write cycle, low power consumption and the ability to operate within a wide temperature range. It is also designed for easy debugging and low maintenance, as all programming can be performed via the I2C, SPI, QPI and SOT-23 interfaces. The AT25XE021A-SSHN-T also supports a variety of programmable features, such as block write and sector erase, plus several sleep modes.
Due to its reliable data storage, low power consumption and ease of programming, the AT25XE021A-SSHN-T is an ideal memory solution for embedded controllers, communication devices, consumer and medical applications. Its easy programming and debugging capabilities, plus its support of a wide range of operating voltages, makes it a popular choice for many applications. The AT25XE021A-SSHN-T EEPROM is an effective, reliable and cost-effective solution for many memory requirements.
The specific data is subject to PDF, and the above content is for reference
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| AT25XE021A-SSHN-T | Adesto Techn... | -- | 1000 | IC FLASH 2M SPI 70MHZ 8SO... |
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AT25XE021A-SSHN-T Datasheet/PDF