AT34C02B-10TU-1.7

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AT34C02B-10TU-1.7 is a random access memory (RAM) device developed by a semiconductor manufacturer that provides a wide range of memory solutions. This memory device is available in various forms, including Dual inline package (DIP), Dipole-compatible, and hybrid integrated circuit (HIC) for various applications in electronic systems. This particular memory device is particularly suitable for applications that require either low power consumption or high storage capacity, such as microcomputer, server, networking, and embedded systems.

Application Field

The AT34C02B-10TU-1.7 is primarily designed for applications requiring medium to high data transfer rates. It is commonly used in telecoms, industrial and medical instrumentation, automotive and other embedded systems. In addition, it is also used in the development of educational, entertainment and gaming products. As such, the AT34C02B-10TU-1.7 is ideal for applications that require both high memory density and high performance.

The AT34C02B-10TU-1.7 is also capable of providing storage and programming capabilities for various applications. It is suitable for applications such as image or audio storage and processing, data base or software microcode development. It can also be used for storing various computer instructions or microcontroller operations in programmable logic devices or microprocessors.

Working Principle

The AT34C02B-10TU-1.7 is a static random-access memory (SRAM) device. It is different from dynamic RAM (DRAM) in that data is stored in cells that are permanently wired into the device and not subject to electrical refresh. The cells are arranged in a grid-like configuration in the device and are accessed via one of two logic pathways. The address lines of the device are used to determine the cells to be accessed, while the R/W line determines the type of operation to be performed; either read or write. The data output of the device is expected to be valid when the address lines are stable and the R/W signal is in the write position.

In order to increase the speed at which data can be transferred, the device uses a dual-clock architecture. This architecture employs two separate clock inputs for addressing and data transfer in order to achieve maximum performance. The device employs a fast read and write cycle time, which allows for high speed data access and manipulation.

The AT34C02B-10TU-1.7 also includes an automatic power control feature. This feature ensures that the device only consumes power when data is being addressed or written. This reduces overall power consumption, making the device suitable for mobile or portable applications and reducing the time for power-up and power-down operations.

Overall, the AT34C02B-10TU-1.7 is an advanced SRAM device designed to provide high-speed, high-density storage and processing capabilities while consuming low power and featuring low system latency. It is suitable for applications requiring high performance and is frequently used in the development of consumer, medical and industrial electronic products.

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