AT93C46-10SU-2.7-T

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Memory Type:	Non-Volatile
Memory Format:	EEPROM
Technology:	EEPROM
Memory Size:	1Kb (128 x 8 , 64 x 16)
Clock Frequency:	2MHz
Write Cycle Time - Word, Page:	10ms
Memory Interface:	SPI
Voltage - Supply:	2.7 V ~ 5.5 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SOIC
Base Part Number:	AT93C46

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Introduction

AT93C46-10SU-2.7-T is a type of memory, usually referred to as EEPROM (electrically erasable programmable read-only memory). It is a non-volatile memory device capable of storing up to 1024 bits (128 x 8 bits) of data. This memory device is designed to provide a low-cost reliable method for storing data that needs to be updated many times.

Application Field

AT93C46-10SU-2.7-T is commonly used in a wide range of electronic devices such as automotive and industrial control systems, home automation systems, medical equipment, digital cameras and many more. It is often favored over other memories due to its cost effectiveness, scalability and reliability.Due to its low power consumption, AT93C46-10SU-2.7-T is commonly used as a backup memory for applications that require long term data storage and retrieval. It is also used in automotive and industrial applications, where its low power requirements are important.

Working Principle

AT93C46-10SU-2.7-T is a type of non-volatile memory, which means that it retains data even when the power is turned off. It consists of one or more memory cells which can store bits of data. Each memory cell is made up of two transistors and two capacitors, which form a three terminal device called a flip-flop. Each flip-flop can store one bit of data.The information is stored in a specific sequence of voltage levels between the two capacitors inside the flip-flop. This process is called a “write”. After the write has been completed, the data is read from the memory by applying a voltage level to one of the terminals. This voltage is read by the other terminals and is transferred back as information. The data can then be erased by sending a higher voltage level to the memory cell. The memory cell is then ready to store new data.

Conclusion

AT93C46-10SU-2.7-T is a type of non-volatile memory device that is ideal for use in a wide range of applications. It is cost effective, reliable and low power consuming. It consists of one or more memory cells that can store bits of data. The information is stored in a specific sequence of voltage levels between two capacitors inside the memory cell, which is then read and written by applying a voltage level.

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