AT93C66A-10TU-2.7

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AT93C66A-10TU-2.7 belongs to the memory class and is a serial EEPROM designed to provide users with a cost-effective, low-power, high-reliability and long product life. It is widely used in the filed of automotive, medical, industrial control and other applications. The device features 2Kbit(256B x 8) and endurance of 1,000K write/erase cycles. AT93C66A-10TU-2.7 is available in SSOP20 packaged and market in industrial-wide temperature range, as well as automotive-wide temperature range.

AT93C66A-10TU-2.7 has Data Encryption Standard based 4-wire-interface Serial EEPROMs. Modes of the device support random addressing and sequential read/write operations. It also contains an 8-bit CRC checker, a write and erase protection circuitry, Chip select decode circuitry and a write protect pin. It features several features such as Sequence Protect, 32-byte page write protect, Block Protect, and a programming timeout in order to protect from accidental write.

AT93C66A-10TU-2.7 employs a memory built from a floating-gate process, which is capable of storing information. It uses Fowler-Nordheim tunneling to inject electrons, or tunnel electron, into the floating gate. This applied voltage is greater than the threshold voltage and electrons enter the tunnel oxide and trap into the floating gate, which in turn changes the threshold voltage of the transistor. This process is used to program and erase the device. To erase the device, the electrons are removed from the floating gate using Fowler-Nordheim tunneling and the erase voltage is greater than the threshold voltage.

For programming the devices, the voltage applied must be greater than the nominal program gate voltage and lower than the erase gate voltage, in order to generate the write current. In this case, write current consist of tunnel current, which flows across the tunnel oxide and flows through the transistor, while charging the floating gate. When the charge reaches the required program level, the device issues an acknowledge signal. Writing time is inversely proportional to the amount of charge applied to the cell.

AT93C66A-10TU-2.7 features a data retention time of 10 years, even when the device is powered down. This allows a stable storage of the EEPROM for a long period of time. In order to ensure reliable operation, the device contains embedding redundant bits to ensure integrity and improved endurance. In addition, the device contains special programming or operation modes like multiple byte write mode and write verify mode, which helps to increase the reliability of data writing.

AT93C66A-10TU-2.7 also provides extraordinary flexibility to users. Its operating temperature range is between -45°C to +125°C, which minimizes the temperature dependant characteristics. It also has the ability to store more than 1Kbyte/second of data, which makes it suitable for applications where intense data throughput is required. It also supports multiple bus operations, provides user selectable write and protect signal cycle times, and ensures operation over a wide range of supply and temperature conditions.

To sum up, AT93C66A-10TU-2.7 is a versatile, low-power memory device that can meet a wide range of industry needs. It is efficient, reliable, and has exceptional lifetime compared to conventional memory devices. Moreover, its unique features such as wide operating temperature range, embedded redundant bits, and multiple bus operations, among others, make it a suitable solution for many applications.

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