AT93C56-10SI-2.7-T

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

AT93C56-10SI-2.7-T is a type of nonvolatile memory device, widely used in a variety of electronic devices. It is organized as 8Kbit and has an 8-pin packaging. It is one of the most versatile types of memory, capable of storing data even after it is powered off, providing reliable data storage and retrieval.

This type of memory consists of a certain number of cells, arranged in a variety of patterns, that enable it to store data in binary form. Each cell can store a single bit, either a zero or a one. The individual cells are connected to a control circuit, which can read and write data from the cells. The control circuit can also erase the previously stored data, or move data from one cell to another.

The AT93C56-10SI-2.7-T is typically used in a variety of applications including embedded systems, automotive electronics, consumer electronics, industrial automation, and medical equipment. For example, it can be used as a permanent storage device for microcontroller-based systems, allowing users to program and monitor their system, even when the power is off. The device can also be used in automotive applications, allowing users to store information related to vehicle control and safety, such as tire pressure, oil level, and engine RPM.

The working principle of AT93C56-10SI-2.7-T is based on the principles of metal-oxide-semiconductor field-effect transistors (MOSFET), where the transistors are controlled by voltages applied to their gate terminals. The device contains a series of memory cells arranged in rows and columns, with each cell being able to store either a zero or a one bit. The cell address on the device is programmed and controlled by the external circuitry. A high voltage applied to the gate of a cell causes a channel to form from source to drain. This allows the drain current to flow, thereby enabling the cell to store a one bit. A lower gate voltage causes the channel to close, resulting in a zero bit.

To write data to the memory cell, pulses of voltage can be applied to the gate. To read the data, the voltage is set so that a read current flows through the cell. This current is either high or low depending upon the state of the cell. To erase the data, the voltage is increased to a threshold value that causes the cell to be completely depleted of electrons, resulting in an erased state.

Overall, the AT93C56-10SI-2.7-T is a popular type of nonvolatile memory, suitable for a wide range of applications. Its ability to store data reliably, even when the system is not powered, makes it an ideal solution for a variety of applications, including automotive electronics and embedded systems.

The specific data is subject to PDF, and the above content is for reference