BA89202VH6433XTMA1 Allicdata Electronics
Allicdata Part #:

BA89202VH6433XTMA1TR-ND

Manufacturer Part#:

BA89202VH6433XTMA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: DIODE RF SW 35V 100MA SC79
More Detail: RF Diode Standard - Single 35V 100mA PG-SC79-2
DataSheet: BA89202VH6433XTMA1 datasheetBA89202VH6433XTMA1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Diode Type: Standard - Single
Voltage - Peak Reverse (Max): 35V
Current - Max: 100mA
Capacitance @ Vr, F: 1.1pF @ 3V, 1MHz
Resistance @ If, F: 500 mOhm @ 10mA, 100MHz
Operating Temperature: 150°C (TJ)
Package / Case: SC-79, SOD-523
Supplier Device Package: PG-SC79-2
Base Part Number: BA892
Description

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The BA89202VH6433XTMA1 is a specialized diode for radio-frequency (RF) applications. It is used to detect and amplify electromagnetic signals at frequencies between 0.5 MHz and 50 GHz. The diode is a type of negative resistance diode, meaning that it works in a non-linear fashion when current is applied to it, allowing for higher power handling without the need for active electronic element.

The BA89202VH6433XTMA1 diode consists of a rectifying contact made on a semiconductor barrier, usually composed of moly, silicon, or gallium arsenide material. It has a gate terminal, connected to the electric field gate either externally or internally. The operation and structure of the diode are such that it can turn on and off quickly, thus allowing it to conduct short bursts of current and magnify the signals at high frequency.

When current is applied to the diode, it creates a negative resistance in the diode, meaning that the voltage on the diode does not drop linearly as it normally does in a regular diode. This allows for a higher power handling capacity and also more precise control of the amplitude of the signals.

The BA89202VH6433XTMA1 is mainly used in applications such as communication systems, antennas, detectors and amplifiers, Wi-Fi and Bluetooth devices, radar systems, and transceivers and receivers. It provides high efficiency, low insertion loss, low heat dissipation, and stable operation in a wide range of temperatures. The diode also features low reverse recovery times and can amplify signals at high frequencies.

The working principle of the diode is such that it creates a negative resistance when current is applied to it. This creates a non-linear I-V characteristic, which allows for higher power handling and better control of the signals. The BA89202VH6433XTMA1 is highly efficient and produces good results in many radio frequency applications.

In conclusion, the BA89202VH6433XTMA1 is a specialized diode for radio frequency applications. It has a rectifying contact made on a semiconductor barrier, can quickly turn on and off, and can amplify signals at high frequencies. It is mainly used in communication, Wi-Fi, Bluetooth and radar systems and can provide high efficiency and low heat dissipation. The working principle of the diode is such that the voltage on the diode does not drop linearly when current is applied to it, creating a negative resistance diode and allowing for higher power handling and more precise control of the signals.

The specific data is subject to PDF, and the above content is for reference

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