BA892H6433XTMA1 Allicdata Electronics
Allicdata Part #:

BA892H6433XTMA1TR-ND

Manufacturer Part#:

BA892H6433XTMA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: DIODE RF SW 35V 100MA SCD80
More Detail: RF Diode Standard - Single 35V 100mA PG-SCD80-2
DataSheet: BA892H6433XTMA1 datasheetBA892H6433XTMA1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Diode Type: Standard - Single
Voltage - Peak Reverse (Max): 35V
Current - Max: 100mA
Capacitance @ Vr, F: 1.1pF @ 3V, 1MHz
Resistance @ If, F: 500 mOhm @ 10mA, 100MHz
Operating Temperature: 150°C (TJ)
Package / Case: SC-80
Supplier Device Package: PG-SCD80-2
Base Part Number: BA892
Description

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BA892H6433XTMA1 Application Field and Working Principle

BA892H6433XTMA1 is a RF diode that is used in electronic applications. It is a high-performance, ultra-telecommunications applications. This diode is highly efficient, reliable and wideband performance, so it is suitable for a range of applications.

Applications

BA892H6433XTMA1 is mainly used in RF filtering, switching, detection and modulator applications. It can be used as a junction barrier or a deflector in ultra-high-speed telecommunications applications. It can also be used as a high-frequency detector or RF detect switch in RF radio receivers and transmitters. Moreover, it can be used in the protection circuit for the broadband signal of satellite communication systems.

Working Principle

The working principle of BA892H6433XTMA1 is based on the principle of junction diode; it will pass current in one direction only. When a voltage is applied across the diode, it will allow the current to flow in a forward direction; however, it will prevent the current from flowing in a reverse direction. The current flowing through the diode is known as the forward current; this current flows through the junction of the semiconductor. In the opposite direction, the reverse current is prevented from flowing because the reverse voltage across the junction is blocked by the energy barrier created by the reverse bias voltage. When the diode is used in RF applications, it is suitable for high-frequency operations because it has an efficient design with low parasitic capacitance, low inductance and low voltage rise. It has a fast recovery time and low noise characteristics, making it a suitable component for high-frequency communications applications.

Conclusion

Overall, BA892H6433XTMA1 is a high-performance RF diode that is suitable for a range of applications, such as RF filtering, switching, detection and modulator applications. It has a fast recovery time and low noise characteristics, making it an efficient component for high-frequency communications applications. It is reliable, efficient and wideband performance, so it is suitable for a range of applications and can be used in both small and large signal applications.

The specific data is subject to PDF, and the above content is for reference

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