BA892H6770XTSA1 Allicdata Electronics
Allicdata Part #:

BA892H6770XTSA1TR-ND

Manufacturer Part#:

BA892H6770XTSA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: DIODE RF SW 35V 100MA SCD80
More Detail: RF Diode Standard - Single 35V 100mA PG-SCD80-2
DataSheet: BA892H6770XTSA1 datasheetBA892H6770XTSA1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Diode Type: Standard - Single
Voltage - Peak Reverse (Max): 35V
Current - Max: 100mA
Capacitance @ Vr, F: 1.1pF @ 3V, 1MHz
Resistance @ If, F: 500 mOhm @ 10mA, 100MHz
Operating Temperature: 150°C (TJ)
Package / Case: SC-80
Supplier Device Package: PG-SCD80-2
Base Part Number: BA892
Description

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Diodes are an important part of any electronic system. The BA892H6770XTSA1 diode is one of the most commonly used diodes. It is a surface mount Schottky barrier diode, specifically designed as a low voltage, low power RF switch, RF detector, and RF mixer.

The BA892H6770XTSA1 diode is a full surface mount component which helps to accommodate space and density restrictions which are common in many electronic applications. It is a high speed switching component which offers minimal capacitance and low on-state resistance. The small size and low voltage requirements make it an ideal choice for a wide range of applications.

This device is designed for bandwidths up to 5GHz, making it suitable for use in high speed consumer electronics. It is especially useful for applications such as cellular infrastructure, satellite communications, and WLAN systems.

The working principle of the BA892H6770XTSA1 diode is similar to other Schottky barrier diodes. Schottky barrier diodes take advantage of a metal-semiconductor junction to create a low voltage drop across the device, which allows it to remain on when a current is applied. In addition, the metal-semiconductor junction can "clamp" the voltage to a certain level, preventing high voltage spikes or surges from damaging the device.

When the forward bias voltage is applied to the diode, the electric current is allowed to pass through the diode and the diode is turned on. When the reverse bias voltage is applied, it forms a depletion layer, which prevents electric current from passing through the diode and thus turns the diode off.

The BA892H6770XTSA1 diode is a very versatile component which offers several advantages over other types of diodes. As a surface mount component, it takes up a minimal amount of space and offers excellent performance. In addition, its low voltage and power requirements make it suitable for a variety of applications in consumer electronics and other fields.

The specific data is subject to PDF, and the above content is for reference

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