BAP1321-04,215 Discrete Semiconductor Products |
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Allicdata Part #: | 568-11081-2-ND |
Manufacturer Part#: |
BAP1321-04,215 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | DIODE PIN 60V 100MA SOT-23 |
More Detail: | RF Diode PIN - 1 Pair Series Connection 60V 100mA ... |
DataSheet: | BAP1321-04,215 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | PIN - 1 Pair Series Connection |
Voltage - Peak Reverse (Max): | 60V |
Current - Max: | 100mA |
Capacitance @ Vr, F: | 0.325pF @ 20V, 1MHz |
Resistance @ If, F: | 1.3 Ohm @ 100mA, 100MHz |
Power Dissipation (Max): | 250mW |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | TO-236AB (SOT23) |
Base Part Number: | BAP1321-04 |
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Diodes are an important component in a range of electronic devices, and they play a key role in the functioning of radio frequency (RF) systems. The BAP1321-04,215 is a varactor diode designed specifically for RF applications. The following will discuss the application fields and working principles of this diode.
The BAP1321-04,215 is primarily used in voltage controlled oscillator (VCO) circuits. It has a high performance, low-noise output, and is suitable for applications such as mobile communication systems. The diode also has a low capacitance value, which means it can be used in wide voltage range applications. Additionally, it is suitable for use in low power consumption systems, due to its low noise characteristics.
The BAP1321-04,215 is also used in some digital tuning applications, such as in digital radio and satellite receivers. It has an ultra-low bias current and can be used with voltages up to 34 volts. Additionally, the diode has an extremely high linearity, making it suitable for digital tuning applications.
The working principle of the BAP1321-04,215 is based on the modulation of the RF signal by a voltage controlled oscillator. The diode acts as a variable capacitance between two points when a voltage is applied. The capacitance of the diode can be adjusted by the applied voltage, which modulates the electrical signal and creates an oscillating circuit. This oscillating circuit is then used to produce an RF signal of the desired frequency.
The BAP1321-04,215 is also designed to be highly reliable, as it has a high operation temperature range and a low amount of power dissipation. Additionally, it has a high quality silicone encapsulation for protection from moisture and dust. The device is also tested for overshoot and undershoot capability, which means it can handle large voltage fluctuations in the circuit.
In conclusion, the BAP1321-04,215 is a high performance diode designed specifically for RF applications. It is used in VCO circuits, digital tuning applications, and other systems that require a high degree of electrical signal modulation. The diode works by creating a variable capacitance between two points when a voltage is applied, allowing for a modulation of the electrical signal. Additionally, the device is highly reliable, capable of handling large voltage fluctuations, and protected from moisture and dust.
The specific data is subject to PDF, and the above content is for reference
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