Allicdata Part #: | BAP1321LX,315-ND |
Manufacturer Part#: |
BAP1321LX,315 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | DIODE PIN 60V 100MA SOD-882T |
More Detail: | RF Diode PIN - Single 60V 100mA 130mW 2-DFN1006D (... |
DataSheet: | BAP1321LX,315 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | PIN - Single |
Voltage - Peak Reverse (Max): | 60V |
Current - Max: | 100mA |
Capacitance @ Vr, F: | 0.28pF @ 20V, 1MHz |
Resistance @ If, F: | 1.3 Ohm @ 100mA, 100MHz |
Power Dissipation (Max): | 130mW |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Package / Case: | 2-XDFN |
Supplier Device Package: | 2-DFN1006D (0.6x1.0) |
Base Part Number: | BAP1321 |
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BAP1321LX 315 Application Field And Working Principle
The BAP1321LX 315 is a diode belonging to the Radio Frequency (RF) family, typically used in various low power RF amplification and switching applications. This diode is a three-terminal device that can be used in radio frequency (RF) circuits for amplifying, switching, and noise-reducing functions. It has one anode and two cathodes, with the anode being connected to the positive terminal of the circuit and the cathodes connected to the negative terminal of the circuit. The main feature of this type of diode is that it has very low capacitance and high blocking voltage, making it especially suitable for RF applications. It has a wide frequency range and good linearity, making it ideal for a variety of RF, microwave, and digital applications.
Working Principle
The BAP1321LX 315 diode works on the principle of rectification and utilizes a forward-biased voltage to switch on and off the current in the circuit. When a negative-going signal is applied, it helps to reduce the bias voltage and in turn, induces a current flow in the opposite direction, thereby creating an alternating current waveform. This waveform is then amplified by the RF amplifier through an inductor, resulting in an output signal. The current flow in this type of diode is highly dependent on the bias voltage and amplitude of the input signal. The circuit can be designed to increase or decrease the amplitude of the input signal, depending on the desired gain.
Application Field
The BAP1321LX 315 diode can find its applications in a wide variety of RF and digital electronic products such as radios, cell phones, microwaves, GPS, and computer networks, as well as power supplies and amplifiers. Due to its low capacitance and high blocking voltage, it is commonly used in antennas and antennas coupling circuits. Its wide frequency range also makes it suitable for a variety of RF and digital applications. It is able to amplify, switch, and reduce noise in high frequency and low frequency circuits. Its fast switching capability makes it ideal for antenna signals in high-frequency radio receivers.
In addition, the diode can be used in oscillators, and miniaturised amplifiers. Its accuracy, linearity, and response time make it suitable for pulse-gated RF receivers and transmitters or digital circuits. It is also used in the monitoring and control of power systems, and in low noise amplifiers. Due to its high stability and low leakage current, it can also be used in digital circuits such as switches, multiplexers, and regulators.
Conclusion
The BAP1321LX 315 diode is a variety of RF diode and is mainly used in various RF and digital applications. Its large amplification and switching capability, low capacitance, and high blocking voltage make it an ideal choice for a wide range of low power-amplifying, switching, and noise-reducing applications. It can be used in antennas and antennas coupling circuits, oscillators, and miniaturised amplifiers, as well as power supplies, amplifiers, and digital circuits. As such, it has immense potential for use in electronics, communications, and power systems.
The specific data is subject to PDF, and the above content is for reference
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