Allicdata Part #: | BAQ33-GS08GITR-ND |
Manufacturer Part#: |
BAQ33-GS08 |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 30V 200MA SOD80 |
More Detail: | Diode Standard 30V 200mA Surface Mount SOD-80 Mini... |
DataSheet: | BAQ33-GS08 Datasheet/PDF |
Quantity: | 7500 |
2500 +: | $ 0.03347 |
5000 +: | $ 0.02911 |
12500 +: | $ 0.02474 |
25000 +: | $ 0.02328 |
62500 +: | $ 0.02183 |
125000 +: | $ 0.01940 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 30V |
Current - Average Rectified (Io): | 200mA |
Voltage - Forward (Vf) (Max) @ If: | 1V @ 100mA |
Speed: | Small Signal = |
Current - Reverse Leakage @ Vr: | 1nA @ 15V |
Capacitance @ Vr, F: | 3pF @ 0V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-213AC, MINI-MELF, SOD-80 |
Supplier Device Package: | SOD-80 MiniMELF |
Operating Temperature - Junction: | -65°C ~ 175°C |
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Diodes are commonly used to control the flow of current in a circuit, and are necessary for many applications such as power regulation and signal conditioning. The BAQ33-GS08 is a single rectifier diode, and is widely used in a variety of applications due to its small size and low cost. This article will provide an overview of the BAQ33-GS08 application field and working principle.
The BAQ33-GS08 is a diode designed to limit the flow of current through a circuit. It works by allowing current to flow in one direction, while blocking current in the opposite direction. This makes it useful for applications where very low power levels need to be regulated, such as in signal conditioning. The BAQ33-GS08 is also useful for protecting other components in the circuit from reverse bias currents.
The BAQ33-GS08 is primarily used in the field of communications. It can be used in radio and TV circuits, telephone switching systems, and digital communications. It is also used in computer and other systems, where it can provide protection from both surges and overcurrents. Its small size and low cost make it an ideal choice for many applications.
The working principle of the BAQ33-GS08 is based on the fact that it is a p-n junction diode. A p-n junction diode has two layers of semiconductor material – one p-type, and one n-type. When a voltage is applied to the diode, electrons flow from the n-type layer to the p-type layer, creating a potential barrier. This potential barrier prevents the flow of electrons in the opposite direction. This is how the BAQ33-GS08 functions as a rectifier – it only allows current to flow in one direction.
The BAQ33-GS08 is a popular choice for many applications due to its reliable performance and low cost. It is well suited for use in communications systems, as it can provide reliable voltage regulation and protection from reverse bias currents. Its small size and low power consumption make it an ideal choice for many applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
BAQ33-GS08 | Vishay Semic... | 0.04 $ | 7500 | DIODE GEN PURP 30V 200MA ... |
BAQ34-GS08 | Vishay Semic... | 0.04 $ | 10000 | DIODE GEN PURP 60V 200MA ... |
BAQ334-TR | Vishay Semic... | -- | 10000 | DIODE GP 60V 200MA MICROM... |
BAQ35-GS08 | Vishay Semic... | -- | 5000 | DIODE GEN PURP 140V 200MA... |
BAQ333-TR | Vishay Semic... | 0.04 $ | 17500 | DIODE GP 40V 200MA MICROM... |
BAQ33-GS18 | Vishay Semic... | 0.03 $ | 1000 | DIODE GEN PURP 30V 200MA ... |
BAQ333-TR3 | Vishay Semic... | 0.03 $ | 1000 | DIODE GP 30V 200MA MICROM... |
BAQ34-GS18 | Vishay Semic... | 0.03 $ | 1000 | DIODE GEN PURP 60V 200MA ... |
BAQ334-TR3 | Vishay Semic... | 0.04 $ | 1000 | DIODE GP 60V 200MA MICROM... |
BAQ35-GS18 | Vishay Semic... | 0.04 $ | 1000 | DIODE GEN PURP 125V 200MA... |
BAQ335-TR3 | Vishay Semic... | 0.04 $ | 1000 | DIODE GP 125V 200MA MICRO... |
BAQ335-TR | Vishay Semic... | -- | 1000 | DIODE GP 125V 200MA MICRO... |
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