Allicdata Part #: | BAQ333GITR-ND |
Manufacturer Part#: |
BAQ333-TR |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GP 40V 200MA MICROMELF |
More Detail: | Diode Standard 40V 200mA Surface Mount MicroMELF |
DataSheet: | BAQ333-TR Datasheet/PDF |
Quantity: | 17500 |
2500 +: | $ 0.03804 |
5000 +: | $ 0.03308 |
12500 +: | $ 0.02811 |
25000 +: | $ 0.02646 |
62500 +: | $ 0.02481 |
125000 +: | $ 0.02205 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 40V |
Current - Average Rectified (Io): | 200mA |
Voltage - Forward (Vf) (Max) @ If: | 1V @ 100mA |
Speed: | Small Signal = |
Current - Reverse Leakage @ Vr: | 1nA @ 15V |
Capacitance @ Vr, F: | 3pF @ 0V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | 2-SMD, No Lead |
Supplier Device Package: | MicroMELF |
Operating Temperature - Junction: | 175°C (Max) |
Base Part Number: | BAQ333 |
Description
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Diodes - Rectifiers - SingleA diode is an electrical device with two electrodes, an anode and a cathode, making it a two-terminal device. In the case of the BAQ333-TR single junction diode, the two junctions are fabricated with a single surface of p-type doped semiconductor material forming the anode side and a single surface of n-type material forming the cathode side.In its conducting state, the BAQ333-TR is used to convert alternating current (AC) to direct current (DC) and to allow electricity to flow in only one direction. This single junction diode is often used in power supplies and in power-management circuitry as a rectifier. rectifiers can convert AC energy to DC energy with minimal energy loss and are used to convert AC power to DC power in many different applications such as charging systems in electric vehicles, photovoltaic cells and portable solar panels, in rectifying transformer circuits, and in switched-mode power supplies (SMPS) in relays, computers, and other electronic devices.The junction of the BAQ333-TR diode functions as an electrical switch, and the diode is generally specified for its reverse breakdown voltage, forward or operating current, and rate of temperature change. When used as a rectifier, the BAQ333-TR diode’s maximum forward current is usually limited by the power dissipation of the device, and its forward voltage drop is limited to a few hundred volts. The junction capacitance of the BAQ333-TR is also an important consideration when designing circuits with the diode, and its reverse leakage curren can be used to determine the working efficiency of the device.The BAQ333-TR diode is a low-power diode that is typically configured as a single junction with two metal contacts. This diode features a built-in reverse polarity design that allows high-speed switching times and can be used as a rectifier to control the current in both directions. The diode also provides a low forward voltage drop and a relatively low reverse leakage current, making it ideal for applications requiring efficient energy conversion.The BAQ333-TR diode is also ideal for applications that require a higher reverse breakdown voltage and can handle higher currents of up to 11 Amps. The device is also robust, with a high power dissipation rating of 1.2W. This device’s reverse recovery time is less than 25 nanoseconds, allowing it to switch rapidly between conduction and non-conduction states. The BAQ333-TR also features a non-punch-through design that facilitates ESD protection and high reliability, an important consideration when engineering circuits for reliable operation.The diode’s advantages, such as its built-in reverse polarity, low forward voltage drop, low reverse leakage current, and robust nature make it an ideal choice for applications requiring a reliable rectifier. In conclusion, the BAQ333-TR is a single junction diode, with two electrodes that operate in forward and reverse bias conditions and is ideal for use as a reliable rectifier. The diode is a low-power device, capable of handling up to 11 Amps, and features a low forward voltage drop and a low reverse leakage current, making it perfect for energy conversion applications. Additionally, the device features a non-punch-through design and can switch quickly between conduction and non-conduction states, making it ideal for applications requiring rapid switching and reliable operation.The specific data is subject to PDF, and the above content is for reference
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