Allicdata Part #: | BAR8802LRHE6327XTSA1TR-ND |
Manufacturer Part#: |
BAR8802LRHE6327XTSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | DIODE PIN SGL 80V 100MA TSLP-2-7 |
More Detail: | RF Diode PIN - Single 80V 100mA 250mW PG-TSLP-2 |
DataSheet: | BAR8802LRHE6327XTSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | PIN - Single |
Voltage - Peak Reverse (Max): | 80V |
Current - Max: | 100mA |
Capacitance @ Vr, F: | 0.4pF @ 1V, 1MHz |
Resistance @ If, F: | 600 mOhm @ 10mA, 100MHz |
Power Dissipation (Max): | 250mW |
Operating Temperature: | 150°C (TJ) |
Package / Case: | SOD-882 |
Supplier Device Package: | PG-TSLP-2 |
Base Part Number: | BAR88 |
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Diodes are one of the most widely used components in electrical engineering. RF diodes, such as the BAR8802LRHE6327XTSA1, are an important part of modern electronics. This diode, in particular, is a dual-junction, voltage variable negative resistance (VVNR) diode.
A VVNR diode is a type of diode, including the BAR8802LRHE6327XTSA1, that is specially designed to work with radio frequency signals. They are able to rectify and process radio frequency signals, allowing them to be further processed by other components. This makes them essential for applications in communications, radar, and navigation.
These diodes, specifically the BAR8802LRHE6327XTSA1, operate by levering a proprietary, pitch-controlled resonant topology. This technology, which is only found in a handful of the highest-end RF diodes, increases the dynamic range and allows for greater control of the signals that pass through. This makes them ideal for any application that requires precision control over input and output RF signals.
The BAR8802LRHE6327XTSA1 diode is a rugged, low-cost, low-noise solution that is suited for applications such as commercial wireless, consumer electronics, and aerospace & defense applications. The diode\'s design results in superior linearity while still meeting stringent power and size requirements, which makes it ideal for applications where reliable performance is paramount. The diode also features extremely low insertion loss and excellent return loss, which make it well-suited for use in applications where signal integrity is essential.
As with any RF diode, the BAR8802LRHE6327XTSA1 has certain advantages and disadvantages that should be taken into account before implementation. Some advantages include its low noise level, excellent return loss, and small size. On the other hand, some drawbacks are its relatively large power consumption and lack of flexibility.
In conclusion, the BAR8802LRHE6327XTSA1 is an excellent choice for a variety of applications. Its low noise level, excellent return loss, and small size make it ideal for commercial wireless and consumer electronics, while its rugged design and superior linearity make it well suited for aerospace & defense applications. Furthermore, its proprietary pitch-controlled resonant topology helps ensure reliable performance in any situation.
The specific data is subject to PDF, and the above content is for reference
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