BAR8802VH6327XTSA1 Allicdata Electronics

BAR8802VH6327XTSA1 Discrete Semiconductor Products

Allicdata Part #:

BAR8802VH6327XTSA1TR-ND

Manufacturer Part#:

BAR8802VH6327XTSA1

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: DIODE RF PIN 80V 100MA SC79
More Detail: RF Diode PIN - Single 80V 100mA 250mW PG-SC79-2
DataSheet: BAR8802VH6327XTSA1 datasheetBAR8802VH6327XTSA1 Datasheet/PDF
Quantity: 27000
3000 +: $ 0.05817
6000 +: $ 0.05525
15000 +: $ 0.05087
30000 +: $ 0.04794
75000 +: $ 0.04356
150000 +: $ 0.04210
Stock 27000Can Ship Immediately
$ 0.06
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Not For New Designs
Diode Type: PIN - Single
Voltage - Peak Reverse (Max): 80V
Current - Max: 100mA
Capacitance @ Vr, F: 0.4pF @ 1V, 1MHz
Resistance @ If, F: 600 mOhm @ 10mA, 100MHz
Power Dissipation (Max): 250mW
Operating Temperature: 150°C (TJ)
Package / Case: SC-79, SOD-523
Supplier Device Package: PG-SC79-2
Base Part Number: BAR88
Description

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The BAR8802VH6327XTSA1 is a diode component used primarily in RF (Radio Frequency) applications. It is a dual-diode component, featuring two ultra-low barrier Schottky diodes integrated into a single chip. The BAR8802VH6327XTSA1 has a wide variety of uses, and is an important component in many RF applications.

Application Field

The BAR8802VH6327XTSA1 can be used as a mixer, detector, preamplifier, amplifier, switch and rectifier in radio frequency applications. It is also used in digital radio frequency modulation and demodulation. It is designed to be used as a voltage amplifier in radio frequency systems. It is also used as a power amplifier in RF power transmission systems. In addition, the BAR8802VH6327XTSA1 can be used in analog signal processing, where it is used as a directional coupler or multiplier.

Working Principle

The BAR8802VH6327XTSA1 is a dual-diode component. It contains two separate diodes, one on each side of the chip, which are connected together in a series. The two diodes of the component are connected in parallel, allowing current to flow from one side to the other. This configuration allows the component to be used as a voltage amplifier, or as a directional coupler.

The BAR8802VH6327XTSA1 utilizes the phenomenon of Schottky barrier conduction in order to achieve its voltage amplification capabilities. This phenomenon occurs when a potential barrier is formed between two types of materials, usually a metal and a semiconductor. When current flows across the barrier, electrons are pushed out of the barriers, creating a weak electric field that amplifies the voltage.

The BAR8802VH6327XTSA1 can also be used as a rectifier or switch. These components contain two separate diodes connected in parallel, which allows them to switch a current in either direction. This is known as a rectifying diode, and is commonly used to convert alternating current (AC) into direct current (DC).

The BAR8802VH6327XTSA1 is an important component in RF applications. It can be used as a mixer, detector, amplifier, rectifier, directional coupler and switch. Its dual-diode design allows it to be used for voltage amplification and switching, and its Schottky barrier conduction allows it to achieve greater efficiency.

The specific data is subject to PDF, and the above content is for reference

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