Allicdata Part #: | BAR8902LRHE6433XTMA1TR-ND |
Manufacturer Part#: |
BAR8902LRHE6433XTMA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | DIODE PIN SGL 80V 100MA TSLP-2-7 |
More Detail: | RF Diode PIN - Single 80V 100mA 250mW PG-TSLP-2 |
DataSheet: | BAR8902LRHE6433XTMA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | PIN - Single |
Voltage - Peak Reverse (Max): | 80V |
Current - Max: | 100mA |
Capacitance @ Vr, F: | 0.35pF @ 1V, 1MHz |
Resistance @ If, F: | 1.5 Ohm @ 10mA, 100MHz |
Power Dissipation (Max): | 250mW |
Operating Temperature: | 150°C (TJ) |
Package / Case: | SOD-882 |
Supplier Device Package: | PG-TSLP-2 |
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BAR8902LRHE6433XTMA1 is a type of RF (Radio Frequency) diode – in other words, a semiconductor device – used in electronic systems. The specific uses of this device depend on the field being applied, but they typically involve switching radio frequency (RF) circuits on and off, or modulating RF signals.
The BAR8902LRHE6433XTMA1 can be used in a variety of RF applications, but it is most commonly found in wireless applications. It is used in everything from mobile phones and wireless communication systems to satellite and radar systems. In many of these applications, the diode is used as a switch or a detector, or to provide gain or amplification.
The BAR8902LRHE6433XTMA1 is a type of Schottky diode, meaning it is a semiconductor device consisting of two p-n junctions. This means that it has two electrodes, an anode and a cathode. The difference between this diode and a normal diode is that the Schottky diode has a lower forward-voltage drop than a normal diode. This means that it has a higher conductance than a regular diode. For RF applications, this is desirable because it means that the device can be used more efficiently.
The principle of operation of the BAR8902LRHE6433XTMA1 diode is relatively straightforward. When a voltage is applied to the anode, current will flow from the anode to the cathode. This is due to the fact that the barrier between the anode and the cathode will be lowered, allowing electrons to flow from the anode to the cathode. In the reverse direction, the device will act like a rectifier, preventing current from flowing from the cathode to the anode.
BAR8902LRHE6433XTMA1 diodes can also be used for modulation. This is done by applying a signal to the anode, which causes a change in the current flowing through the diode. This change can be used to modulate the input signal, which can be employed in a variety of applications. For example, this device can be used in wireless communication systems to modulate the RF signal.
In conclusion, the BAR8902LRHE6433XTMA1 is a type of RF diode used in a variety of applications. It is a Schottky diode, which means it has a lower forward-voltage drop than a normal diode and can be used more efficiently. The device can be used as a switch, detector, amplifier, or modulator in order to manipulate signals in a number of ways.
The specific data is subject to PDF, and the above content is for reference
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