BAS21LT3G Discrete Semiconductor Products |
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Allicdata Part #: | BAS21LT3GOSTR-ND |
Manufacturer Part#: |
BAS21LT3G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE GEN PURP 250V 200MA SOT23 |
More Detail: | Diode Standard 250V 200mA (DC) Surface Mount SOT-2... |
DataSheet: | BAS21LT3G Datasheet/PDF |
Quantity: | 20000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 250V |
Current - Average Rectified (Io): | 200mA (DC) |
Voltage - Forward (Vf) (Max) @ If: | 1.25V @ 200mA |
Speed: | Small Signal = |
Reverse Recovery Time (trr): | 50ns |
Current - Reverse Leakage @ Vr: | 100nA @ 200V |
Capacitance @ Vr, F: | 5pF @ 0V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 (TO-236) |
Operating Temperature - Junction: | -55°C ~ 150°C |
Base Part Number: | BAS21L |
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BAS21LT3G is a diode widely used in electronic field due to its ability to limit current and control voltage. Often times, it is used in applications that require rectification, such as in power supplies, batteries, and alternative energy systems. By understanding its working principle, one can better evaluate and determine its performance capabilities.
To understand the working principle of BAS21LT3G, one must understand its basic characteristics and attributes. This particular diode consists of three major parts, the anode, the cathode and the junction. The anode is the positive pole, while the cathode is the negative pole. These two poles are connected via a depletion layer, which acted as a barrier against the flow of electrons. Under normal conditions, current cannot flow through the diode, since the barrier is not permeable to the electrons.
When a voltage is applied to the diode, the depletion layer is eliminated or eliminated. As a result, the current is able to flow through the diode, with the direction of the current depending on the voltage applied to the diode. This is known as the forward bias condition. When the voltage is reversed, the depletion layer is recreated, and the current is prevented from flowing through the diode, known as the reversed bias condition.
The BAS21LT3G diode is used in a variety of applications, due its ability to control the flow of current and to provide rectification. For example, in power supplies, it is used to convert AC power to the DC power that the various components need. It is also used in specialized timers and rectifiers. It is also used in power conversion and energy management systems.
When trying to determine the performance capabilities of the BAS21LT3G, it is important to understand its electrical characteristics. This diode has a forward voltage of 2 volts at 200mA, and a breakdown voltage of 500 volts. Its maximum peak repetitive reverse voltage is 400 volts, and its maximum average forward recovery current is 3mA. Additionally, this diode has a maximum power dissipation of 200mW, at an ambient temperature of 25 degrees Celsius.
In conclusion, the BAS21LT3G combines a variety of features that make it ideal for a wide range of applications that require rectification and current control. Its ability to handle higher voltages, its low forward voltage, and its maximum power dissipation help make it a reliable option for the various applications where it is used. It is important to consider the electrical characteristics of the diode when attempting to select the best option for a given application.
The specific data is subject to PDF, and the above content is for reference
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