BAS21AHT1G

The BAS21AHT1G single diode is a great choice for a variety of applications. This part is designed with a low on-voltage drop, high speed switching, and a low reverse current leakage. This diode can be used in power rectification, voltage regulation, signal rectification, and signal demodulation. It is also well suited for use in signal processing and high frequency switching applications.

The BAS21AHT1G has a voltage rating of 200V, a forward current rating of 175 milliamps. This single diode has a reverse recovery time of 6.5 nanoseconds. It is composed of a Silicon chip and a Silicon nitride passivation layer, which provides a superior thermal and uniform current flow.

The working principle of the BAS21AHT1G single diode is fairly simple. When a positive voltage is applied to the diode the diode will start to conduct. This is because current will pass through the P-type material and onto the N-type contact. The current will then continue to flow through the N-type contact, crossing the junction along the way. As the current continues to flow, it will eventually reach another P-type contact, where it will then be stopped. The forward voltage drop across the diode will remain until the diode is turned off.

The BAS21AHT1G single diode can be used in a wide range of applications including DC power supplies, motor control, battery chargers, transformers, and inverters. This diode has a low on-voltage drop, which makes it highly efficient in low power applications. It is also well suited for use in noise-sensitive applications due to its low reverse current leakage.

The BAS21AHT1G single diode is a great choice for many applications. It is designed with a low on-voltage drop, high speed switching, and low reverse current leakage. This diode can be used in a variety of applications such as low power applications and noise-sensitive circuits. Additionally, it has a wide range of voltage and current ratings, making it suitable for many different applications.