Allicdata Part #: | BAS28WE6327BTSA1TR-ND |
Manufacturer Part#: |
BAS28WE6327BTSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | DIODE ARRAY GP 80V 200MA SOT343 |
More Detail: | Diode Array 2 Independent Standard 80V 200mA (DC) ... |
DataSheet: | BAS28WE6327BTSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Configuration: | 2 Independent |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 80V |
Current - Average Rectified (Io) (per Diode): | 200mA (DC) |
Voltage - Forward (Vf) (Max) @ If: | 1.25V @ 150mA |
Speed: | Small Signal = |
Reverse Recovery Time (trr): | 4ns |
Current - Reverse Leakage @ Vr: | 100nA @ 75V |
Operating Temperature - Junction: | 150°C (Max) |
Mounting Type: | Surface Mount |
Package / Case: | SC-82A, SOT-343 |
Supplier Device Package: | PG-SOT343-4 |
Base Part Number: | BAS28 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Diodes, rectifiers, and arrays are important components in the electrical engineering industry, and the BAS28WE6327BTSA1 is a uniquely configured device that allows for a number of applications and addresses a range of operational tasks. This article will provide a high-level overview of the application fields and working principles of the BAS28WE6327BTSA1.
The BAS28WE6327BTSA1 is a Schottky diode array, or a set of four diodes arranged in a linear configuration. Each diode is composed of one anode, or positive, and one cathode, or negative, and they are housed in a plastic molded shell in order to protect them from external environmental factors. This Schottky configuration is particularly advantageous because it allows for a low reverse leakage and has a low forward voltage drop. The array provides an easy and space-efficient way to connect multiple diodes in a single package.
The array is designed to have a high power rating and is able to handle up to 2A of forward current or 30V of reverse voltage. Due to its low forward voltage drop, the component is able to operate at higher current levels than silicon or other non-rectifying devices. The Schottky junction also means that the component has a higher thermal capability, making it suitable for applications with high temperatures or current levels.
The BAS28WE6327BTSA1 is used in a wide range of applications and is particularly useful in the automotive, consumer electronics, renewable energy, and lighting industries. Automotive applications often require a low forward voltage drop, and the component’s ability to handle large current levels is essential for powering the vehicle’s electrical components. In the consumer electronics industry, the low reverse leakage and high power rating of the component makes it suitable for use in the protection circuits of mobile phones, tablets, and other electronic devices. In renewable energy-related applications, such as solar panels, the component can be used to protect the system from overvoltage or short-circuiting. Finally, the component can also be used in lighting applications, such as LED lighting, where its low forward voltage drop and high power rating are highly advantageous.
The BAS28WE6327BTSA1’s working principle is based on the rectifying properties of a Schottky diode. Simply put, when a forward bias is applied to the diode, current passes through the diode from the anode to the cathode, and when a reverse bias is applied, current is blocked and the diode acts as an insulator. This enables the component to be used in a wide range of applications that require current to flow in one direction and prevent current from flowing in the opposite direction.
In summary, the BAS28WE6327BTSA1 is a Schottky diode array that is designed to have a high power rating, low forward voltage drop, and low reverse leakage. It is used in a wide range of applications, including automotive, consumer electronics, renewable energy, and lighting, and its working principle is based on the basic rectifying properties of a Schottky diode.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
BAS29,215 | Nexperia USA... | 0.04 $ | 1000 | DIODE AVALANCHE 90V 250MA... |
BAS285-GS08 | Vishay Semic... | 0.04 $ | 7500 | DIODE SCHOTTKY 30V 200MA ... |
BAS21M3T5G | ON Semicondu... | -- | 8000 | DIODE GEN PURP 250V 200MA... |
BAS29 | ON Semicondu... | -- | 1000 | DIODE GEN PURP 120V 200MA... |
BAS21W-7-F | Diodes Incor... | -- | 9000 | DIODE GEN PURP 200V 200MA... |
BAS20W-7-F | Diodes Incor... | -- | 6000 | DIODE GEN PURP 150V 200MA... |
BAS21DW5T1G | ON Semicondu... | -- | 1000 | DIODE ARRAY GP 250V 200MA... |
BAS21TW-7 | Diodes Incor... | -- | 1000 | DIODE ARRAY GP 250V 200MA... |
BAS21UE6327HTSA1 | Infineon Tec... | -- | 1000 | DIODE ARRAY GP 200V 250MA... |
BAS21AVD,165 | Nexperia USA... | 0.05 $ | 1000 | DIODE ARRAY GP 200V 200MA... |
BAS21LT3G | ON Semicondu... | -- | 20000 | DIODE GEN PURP 250V 200MA... |
BAS21GWX | Nexperia USA... | 0.01 $ | 1000 | DIODE GEN PURP 200V 225MA... |
BAS21,215 | Nexperia USA... | 0.01 $ | 1000 | DIODE GEN PURP 200V 200MA... |
BAS20,215 | Nexperia USA... | 0.1 $ | 5849 | DIODE GEN PURP 150V 200MA... |
BAS21HMFHT116 | ROHM Semicon... | -- | 3000 | DIODE GEN PURP 200V 200MA... |
BAS20-7-F | Diodes Incor... | -- | 3000 | DIODE GP 150V 200MA SOT23... |
BAS21W,115 | Nexperia USA... | 0.03 $ | 1000 | DIODE GEN PURP 250V 225MA... |
BAS21A RFG | Taiwan Semic... | 0.02 $ | 1000 | DIODE ARRAY GP 250V 200MA... |
BAS21C RFG | Taiwan Semic... | 0.02 $ | 1000 | DIODE ARRAY GP 250V 200MA... |
BAS21S RFG | Taiwan Semic... | 0.02 $ | 1000 | DIODE ARRAY GP 250V 200MA... |
BAS21TR | SMC Diode So... | 0.03 $ | 1000 | DIODE GEN PURP 200V 200MA... |
BAS20LT3G | ON Semicondu... | 0.01 $ | 1000 | DIODE GEN PURP 200V 200MA... |
BAS21HT3G | ON Semicondu... | -- | 10000 | DIODE GEN PURP 250V 200MA... |
BAS20LT1G | ON Semicondu... | -- | 75000 | DIODE GEN PURP 200V 200MA... |
BAS20HT1G | ON Semicondu... | -- | 24000 | DIODE GEN PURP 200V 200MA... |
BAS21AHT1G | ON Semicondu... | -- | 45000 | DIODE GEN PURP 250V 200MA... |
BAS2103WE6327HTSA1 | Infineon Tec... | -- | 141000 | DIODE GEN PURP 200V 250MA... |
BAS21H,115 | Nexperia USA... | 0.04 $ | 3000 | DIODE GEN PURP 200V 200MA... |
BAS21J,115 | Nexperia USA... | 0.06 $ | 36000 | DIODE GEN PURP 300V 250MA... |
BAS21DW-7 | Diodes Incor... | -- | 6000 | DIODE ARRAY GP 200V 200MA... |
BAS21T-7-F | Diodes Incor... | -- | 1000 | DIODE GEN PURP 200V 200MA... |
BAS21TMR6T1G | ON Semicondu... | -- | 3000 | DIODE SW 250V 200MA SC74D... |
BAS20-TP | Micro Commer... | 0.02 $ | 3000 | DIODE GEN PURP 150V 200MA... |
BAS21WS-TP | Micro Commer... | 0.03 $ | 6000 | DIODE GEN PURP 250V 200MA... |
BAS21T-TP | Micro Commer... | 0.03 $ | 3000 | DIODE GEN PURP 250V 200MA... |
BAS20-E3-18 | Vishay Semic... | 0.02 $ | 1000 | DIODE GEN PURP 150V 200MA... |
BAS21WT-TP | Micro Commer... | 0.03 $ | 1000 | DIODE GEN PURP 200V 200MA... |
BAS21-TP | Micro Commer... | -- | 1000 | DIODE GEN PURP 200V 200MA... |
BAS21SW,115 | Nexperia USA... | 0.2 $ | 21383 | DIODE ARRAY GP 250V 225MA... |
BAS21AW,115 | Nexperia USA... | 0.04 $ | 1000 | DIODE ARRAY GP 250V 225MA... |
DIODE SILICON 650V 17A TO220Diode Array ...
DIODE MODULE 600V 35A SM4Diode Array 1 P...
DIODE MODULE 1.8KV 120A D1Diode Array 1 ...
DIODE ARRAY SCHOTTKY 35V TO220ABDiode Ar...
DIODE MODULE 1.4KV 59ADiode Array 1 Pair...
DIODE ARRAY GP 400V 20A TO3PNDiode Array...