BAS385-TR3

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BAS385-TR3 is a PNP silicon planar switching transistor. It is a type of diode-rectifier with a single configuration. The device contains three layers of semiconductor material separated by two p-n junctions. It has a maximum power rating of 50 mW (meaning the device can work continuously up to 50 mW).

Characteristics of BAS385-TR3

The main characteristics of the BAS385-TR3 include an operating voltage of 50 V and a maximum junction temperature of 150°C. The device has a collector current rating of 0.2 A and a base current rating of 2 mA. The collector-emitter breakdown voltage is 50 V and the collector cutoff current is 0.1 mA. It features a maximum storage temperature of 150°C, a minimum operating temperature of -65°C and a thermal resistance (junction-to-ambient) of 160 MΩ˚C.

Application Field of BAS385-TR3

BAS385-TR3 is suitable for use in TV tuners and as a general purpose switch. It is an ideal device for use in low power applications such as remote control applications since it has a low collector cutoff current. It can also be used in audio frequency power amplifiers, drivers, and small motor control circuits.

Working Principle of BAS385-TR3

BAS385-TR3 works on the principle of p-n junction diode rectification. In its normal operating mode, the base-collector junction is reversed biased and the base-emitter junction is forward biased. The device is switched on when a positive voltage is applied between the base and the collector. This allows current to flow from the collector to the emitter, thus enabling the device to perform its intended function. When the voltage between the base and collector is removed the device switches off and the current is blocked.

Conclusion

BAS385-TR3 is a PNP silicon planar switching transistor and a type of single diode-rectifier. It has a maximum power rating of 50 mW and can be used in a variety of applications such as TV tuners, remote control applications, audio frequency power amplifiers, drivers, and small motor control circuits. The device works on the principle of p-n junction diode rectification, where the base-collector junction is reversed biased and the base-emitter junction is forward biased.

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