BAS3010B03WE6327HTSA1 Allicdata Electronics
Allicdata Part #:

BAS3010B03WE6327HTSA1TR-ND

Manufacturer Part#:

BAS3010B03WE6327HTSA1

Price: $ 0.07
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: DIODE SCHOTTKY 30V 1A SOD323-2
More Detail: Diode Schottky 30V 1A Surface Mount PG-SOD323-2
DataSheet: BAS3010B03WE6327HTSA1 datasheetBAS3010B03WE6327HTSA1 Datasheet/PDF
Quantity: 36000
3000 +: $ 0.06454
6000 +: $ 0.06095
15000 +: $ 0.05557
30000 +: $ 0.05199
Stock 36000Can Ship Immediately
$ 0.07
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A
Speed: Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr: 20µA @ 30V
Capacitance @ Vr, F: 40pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: PG-SOD323-2
Operating Temperature - Junction: -65°C ~ 125°C
Base Part Number: BAS3010
Description

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The BAS3010B03WE6327HTSA1 diode is a Single Rectifier belonging to the series of Diodes. This fast, rectifying Schottky diode is designed for high frequency applications including switching and rectification in laptop adapters, desktop power supplies and converters. It is fit for applications that require a low voltage drop, low reverse leakage and fast switching.

The BAS3010B03WE6327HTSA1 diode features a low voltage drop and fast switching. The Vf is 0.46-0.52 volts, and it is capable of operating frequencies up to 1 MHz. The reverse current leakage is minimal, making it suitable as a low-noise, high-efficiency power component. Additionally, this rectifier has good temperature stability and improved surge and ESD characteristics.

The BAS3010B03WE6327HTSA1 diode has a maximum reverse voltage of 30V, a forward current rating of 1.3A and a power dissipation of 2.6W. The junction temperature is -65 to +150 °C and the recommended reverse recovery current is 0.25A. It is offered in a SOD123 package, allowing for minimal board real estate usage.

The operation of the BAS3010B03WE6327HTSA1 diode is based on the rectifying action of the epitaxial layer in the PN junction. Electrons and holes travel through the junction in opposite directions under forward-bias conditions, canceling out each other\'s effect. This ensures a low forward resistance, resulting in a low voltage drop. In reverse-bias conditions, the electric field prevents electrons from crossing the junction, acting much like an insulator for transverse current. The rapid reverse current increases with the temperature, reducing toa very low level at high temperatures, making it ideal for use in the switching and rectifying portions of power supplies and converters.

The BAS3010B03WE6327HTSA1 diode is an efficient, reliable and cost-effective means of rectification in power supplies, converters and other high frequency applications. Its low voltage drop, low reverse leakage and fast switching characteristics make it a top choice for a variety of industries.

The specific data is subject to PDF, and the above content is for reference

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