Allicdata Part #: | BAS316WSRRGTR-ND |
Manufacturer Part#: |
BAS316WS RRG |
Price: | $ 0.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 250MA SOD323F |
More Detail: | Diode Standard 100V 250mA Surface Mount SOD-323F |
DataSheet: | BAS316WS RRG Datasheet/PDF |
Quantity: | 69000 |
3000 +: | $ 0.02434 |
6000 +: | $ 0.02117 |
15000 +: | $ 0.01799 |
30000 +: | $ 0.01693 |
75000 +: | $ 0.01588 |
150000 +: | $ 0.01411 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 100V |
Current - Average Rectified (Io): | 250mA |
Voltage - Forward (Vf) (Max) @ If: | 1.25V @ 150mA |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 4ns |
Current - Reverse Leakage @ Vr: | 1µA @ 75V |
Capacitance @ Vr, F: | 1.5pF @ 0V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | SC-90, SOD-323F |
Supplier Device Package: | SOD-323F |
Operating Temperature - Junction: | -65°C ~ 150°C |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The BAS316WS RRG application field and principles of operation are designed for high-voltage rectification applications. They can be used for AC/DC and DC/DC applications, such as in the automotive environment, where low on-state losses are desired. It is a family of ultra-high-voltage rectifiers designed for use in applications ranging from DC/DC converters to AC/DC voltage converters.
The BAS316WS RRG is a single phase high voltage rectifier specifically designed for applications up to 1000 volts (V) maximum on-state voltage. The device is a discrete rectifier rated at a maximum surge current of 10 (Amps) and has a forward conduction drop of 600 to 800 mV. The device is available in both active and passive packages, with a typical operating temperature range up to 150°C.
The key features of the BAS316WS RRG are the low forward conduction drop, the low leakage current, the high-speed reverse recovery time, the extended operating temperature range, and the low on-state losses. The device also has a high-speed reverse recovery time of just 2µs for a full 1000V output operation.
The working principle of the BAS316WS RRG is based on field effect transistors (FETs). The device consists of two FETs connected in back-to-back configuration, in order to block the passage of current from the anode to the cathode. When a positive voltage is applied to the gate, the FETs open to form a conducting channel, thus allowing the current to flow from the anode to the cathode. The device has a reverse blocking capability of up to 1000 V, which allows the device to act as a rectifier.
In terms of applications, the BAS316WS RRG is used in a wide range of applications including automotive, high-voltage rectification, DC/DC converters, AC/DC voltage converters, and other power conversion systems.
In terms of the advantages of the BAS316WS RRG, the device offers low forward conduction drop, low leakage current, fast reverse recovery time, extended operating temperature range, low on-state losses and reverse blocking capability of up to 1000V.
In summary, the BAS316WS RRG is a high-voltage rectifier with back-to-back FETs design, which is used in a wide range of applications, from automotive to power conversion systems. The key benefits, including low forward conduction drop, low leakage current, fast reverse recovery time, extended operating temperature range, and low on-state losses make it an ideal choice for these applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
BAS3005B02VH6327XTSA1 | Infineon Tec... | 0.06 $ | 9000 | DIODE SCHOTTKY 30V 500MA ... |
BAS3005A02VH6327XTSA1 | Infineon Tec... | 0.06 $ | 15000 | DIODE SCHOTTKY 30V 500MA ... |
BAS3010B03WE6327HTSA1 | Infineon Tec... | 0.07 $ | 36000 | DIODE SCHOTTKY 30V 1A SOD... |
BAS3010S02LRHE6327XTSA1 | Infineon Tec... | 0.08 $ | 1000 | DIODE SCHOTTKY 30V 1A TSL... |
BAS31 | ON Semicondu... | -- | 1000 | DIODE ARRAY GP 120V 200MA... |
BAS31,215 | Nexperia USA... | 0.04 $ | 1000 | DIODE ARRAY AVALANCHE 90V... |
BAS35 | ON Semicondu... | -- | 1000 | DIODE ARRAY GP 120V 200MA... |
BAS31-D87Z | ON Semicondu... | -- | 10000 | DIODE ARRAY GP 120V 200MA... |
BAS31,235 | Nexperia USA... | 0.04 $ | 1000 | DIODE ARRAY AVALANCHE 90V... |
BAS35,215 | Nexperia USA... | 0.04 $ | 1000 | DIODE ARRAY AVALANCHE 90V... |
BAS316Z | Nexperia USA... | 0.01 $ | 18000 | DIODE GEN PURP 100V 250MA... |
BAS34-TAP | Vishay Semic... | 0.04 $ | 40000 | DIODE GEN PURP 60V 200MA ... |
BAS32L,115 | Nexperia USA... | 0.02 $ | 50000 | DIODE GEN PURP 75V 200MA ... |
BAS32L,135 | Nexperia USA... | 0.01 $ | 50000 | DIODE GEN PURP 75V 200MA ... |
BAS316,135 | Nexperia USA... | -- | 80000 | DIODE GEN PURP 100V 250MA... |
BAS316,115 | Nexperia USA... | 0.03 $ | 27000 | DIODE GEN PURP 100V 250MA... |
BAS316-TP | Micro Commer... | -- | 69000 | DIODE GEN PURP 100V 250MA... |
BAS316WS RRG | Taiwan Semic... | 0.03 $ | 69000 | DIODE GEN PURP 250MA SOD3... |
BAS316 RRG | Taiwan Semic... | 0.03 $ | 15000 | DIODE GEN PURP 250MA SOD3... |
BAS321,115 | Nexperia USA... | 0.04 $ | 33000 | DIODE GEN PURP 200V 250MA... |
BAS321,135 | Nexperia USA... | 0.03 $ | 1000 | DIODE GEN PURP 200V 250MA... |
BAS3010A03WE6327HTSA1 | Infineon Tec... | 0.07 $ | 54000 | DIODE SCHOTTKY 30V 1A SOD... |
BAS3007ARPPE6327HTSA1 | Infineon Tec... | 0.14 $ | 219000 | DIODE BRIDGE 30V 900MA SO... |
BAS316,H3F | Toshiba Semi... | 0.02 $ | 1000 | DIODE GEN PURP 100V 250MA... |
BAS33-TAP | Vishay Semic... | 0.02 $ | 1000 | DIODE GEN PURP 30V 200MA ... |
BAS321/8F | Nexperia USA... | 0.03 $ | 1000 | DIODE GEN PURP 200V 250MA... |
BAS34-TR | Vishay Semic... | 0.03 $ | 1000 | DIODE GEN PURP 60V 200MA ... |
BAS321Z | Nexperia USA... | 0.03 $ | 1000 | DIODE GEN PURP 200V 250MA... |
BAS321/8X | Nexperia USA... | 0.04 $ | 1000 | DIODE GEN PURP 200V 250MA... |
BAS382-TR3 | Vishay Semic... | 0.04 $ | 1000 | DIODE SCHOTTKY 50V 30MA M... |
BAS381-TR | Vishay Semic... | 0.04 $ | 1000 | DIODE SCHOTTKY 40V 30MA M... |
BAS381-TR3 | Vishay Semic... | 0.04 $ | 1000 | DIODE SCHOTTKY 40V 30MA M... |
BAS383-TR3 | Vishay Semic... | 0.04 $ | 1000 | DIODE SCHOTTKY 60V 30MA M... |
BAS385-TR3 | Vishay Semic... | 0.04 $ | 1000 | DIODE SCHOTTKY 30V 200MA ... |
BAS386-TR3 | Vishay Semic... | 0.04 $ | 1000 | DIODE SCHOTTKY 50V 200MA ... |
BAS321JF | Nexperia USA... | 0.04 $ | 1000 | BAS321J/SOD323/SOD2Diode ... |
BAS321JX | Nexperia USA... | 0.04 $ | 1000 | BAS321J/SOD323/SOD2Diode ... |
BAS382-TR | Vishay Semic... | 0.04 $ | 1000 | DIODE SCHOTTKY 50V 30MA M... |
BAS383-TR | Vishay Semic... | 0.05 $ | 1000 | DIODE SCHOTTKY 60V 30MA M... |
BAS385-TR | Vishay Semic... | -- | 1000 | DIODE SCHOTTKY 30V 200MA ... |
Diodes - General Purpose, Power, Switchi...
DIODE SCHOTTKY 40V 500MA SC76Diode Schot...
DIODE GEN PURPOSE DO-204ALDiode
DIODE GEN PURP 400V 1A DO41Diode Standar...
DIODE SCHOTTKY 20V 1A DIE 1=400Diode Sch...
DIODE GEN PURP 400V 500MA D5ADiode Stand...