BAS316WS RRG Allicdata Electronics
Allicdata Part #:

BAS316WSRRGTR-ND

Manufacturer Part#:

BAS316WS RRG

Price: $ 0.03
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: DIODE GEN PURP 250MA SOD323F
More Detail: Diode Standard 100V 250mA Surface Mount SOD-323F
DataSheet: BAS316WS RRG datasheetBAS316WS RRG Datasheet/PDF
Quantity: 69000
3000 +: $ 0.02434
6000 +: $ 0.02117
15000 +: $ 0.01799
30000 +: $ 0.01693
75000 +: $ 0.01588
150000 +: $ 0.01411
Stock 69000Can Ship Immediately
$ 0.03
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 250mA
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 1µA @ 75V
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Supplier Device Package: SOD-323F
Operating Temperature - Junction: -65°C ~ 150°C
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The BAS316WS RRG application field and principles of operation are designed for high-voltage rectification applications. They can be used for AC/DC and DC/DC applications, such as in the automotive environment, where low on-state losses are desired. It is a family of ultra-high-voltage rectifiers designed for use in applications ranging from DC/DC converters to AC/DC voltage converters.

The BAS316WS RRG is a single phase high voltage rectifier specifically designed for applications up to 1000 volts (V) maximum on-state voltage. The device is a discrete rectifier rated at a maximum surge current of 10 (Amps) and has a forward conduction drop of 600 to 800 mV. The device is available in both active and passive packages, with a typical operating temperature range up to 150°C.

The key features of the BAS316WS RRG are the low forward conduction drop, the low leakage current, the high-speed reverse recovery time, the extended operating temperature range, and the low on-state losses. The device also has a high-speed reverse recovery time of just 2µs for a full 1000V output operation.

The working principle of the BAS316WS RRG is based on field effect transistors (FETs). The device consists of two FETs connected in back-to-back configuration, in order to block the passage of current from the anode to the cathode. When a positive voltage is applied to the gate, the FETs open to form a conducting channel, thus allowing the current to flow from the anode to the cathode. The device has a reverse blocking capability of up to 1000 V, which allows the device to act as a rectifier.

In terms of applications, the BAS316WS RRG is used in a wide range of applications including automotive, high-voltage rectification, DC/DC converters, AC/DC voltage converters, and other power conversion systems.

In terms of the advantages of the BAS316WS RRG, the device offers low forward conduction drop, low leakage current, fast reverse recovery time, extended operating temperature range, low on-state losses and reverse blocking capability of up to 1000V.

In summary, the BAS316WS RRG is a high-voltage rectifier with back-to-back FETs design, which is used in a wide range of applications, from automotive to power conversion systems. The key benefits, including low forward conduction drop, low leakage current, fast reverse recovery time, extended operating temperature range, and low on-state losses make it an ideal choice for these applications.

The specific data is subject to PDF, and the above content is for reference

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