BAS70W-7-F

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Diodes - Rectifiers - Single - BAS70W-7-F application field and working principle

The BAS70W-7-F is a single silicon rectifier diode designed and manufactured by Beijing Changying Semiconductor Co. Ltd, specially designed for fast switching applications and ideal for high-frequency applications. The BAS70W-7-F has a low forward voltage drop and an ultra-high breakdown voltage, making it perfect for switching power supply, AC adapters and uninterruptible power supplies.

The BAS70W-7-F, like most other diodes, is essentially made up of two components; the p-type semiconductor (N-type for reverse polarity connections) and the n-type semiconductor (P-type for reverse polarity connections). The p-type (or n-type for reverse connections) is the more electrically active component and the n-type (or p-type for reverse connections) is the less electrically active component.

The BAS70W-7-F is a PN junction diode. It has a cut-in voltage or breakdown voltage of 75V and a maximum forward voltage drop of 0.47V. The maximum reverse voltage is 90V and the maximum reverse current is 50µA.

One of the main features of the BAS70W-7-F is its high-frequency performance. This diode is capable of switching frequencies up to 4GHz, which makes it ideal for high-frequency applications such as switching power supplies, AC adapters and uninterruptible power supplies.

In addition to its high-frequency performance, the BAS70W-7-F has an ultra-low forward voltage drop. This low forward voltage drop allows for more efficient conversions from AC to DC, as well as better power management efficiency. The diode also has a low reverse current leakage rating, which helps prevent component damage due to over current.

The BAS70W-7-F’s application field includes high frequency power supply and power management systems, AC-DC converters, DC-DC converters, solar power systems, electro control systems and electronic projects. The diode can also be used in battery charging applications.

The BAS70W-7-F operates on the principle of a PN junction rectifying diode. When forward bias is applied, electrons that are keen to cross the depleted region flow from the n-type material to the p-type material. This flow of electrons from the n-type material to the p-type material results in current flowing from the anode to the cathode, allowing the diode to work as a rectifier, converting AC to DC. When the bias is reversed, the depletion area expands and no current flows through the diode. This keeps the diode from conducting in the reverse direction.

Overall, the BAS70W-7-F is an excellent choice for high-frequency applications and power management. It has a fast switching speed, a low forward voltage drop, an ultra-high breakdown voltage, and a low-current leakage rating. It’s ideal for high-end applications such as switching power supplies, AC adapters, and uninterruptible power supplies.

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