BAS70LT1G

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Diodes are components which are used commonly for the purpose of electric signal conversion, signal switching, circuit protection, and power rectification. Diodes have been around for a long time and have been used in a multitude of applications from rectification to signal switching. Rectifiers are a type of diode which are used to convert an alternating current (AC) into a direct current (DC) and are available in a huge variety of packages, sizes, and shapes.

The BAS70LT1G is a single avalanche diode rectifier made from silicon avalanche technology. It is a surface mount general-purpose, low current diode designed for automotive applications, consumer electronics, and telecommunications. This diode can be used in various applications where power rectification is required. It is designed to provide a low forward voltage drop and reduce switching losses. The BAS70LT1G rectifier is capable of operating in a temperature range of -40 to +125 degrees Celsius.

The BAS70LT1G has several different applications that it can be used for. It can be used in power supplies, switching applications, low and high frequency noise suppression, and AC-DC rectification. It is suitable for use in systems with performance requirements such as compact size, low forward voltage, high current capability, and low power dissipation. The BAS70LT1G is the ideal choice for applications requiring a long service life and higher surge capabilities. It is a low cost solution for automotive and consumer electronics applications.

The BAS70LT1G has a maximum reverse voltage of 70V and a peak reverse surge current rating of 1A. The datasheet of this diode specifies a range of 4 to 6 V for the forward voltage drop with a range of 2 to 20 mA for the continuous forward current. Its operating junction temperature range is -40°C to +125°C. The maximum reverse current ratings for the BAS70LT1G at junction temperatures of +25°C and +125°C are 1 µA and 10 µA respectively.

The working principle of the BAS70LT1G is based on the avalanche breakdown of the diode. This works by the diode having an avalanche region within it which is separated from the depletion region. When a large electric field is applied, electrons within the avalanche region accelerate and gain enough energy to cause further electron cascade and create an avalanche of carriers. As a result of this, a large current will flow and the diode will then switch to its conductive state.

The BAS70LT1G also has a low reverse leakage. This is due to the fact that the depletion region is very narrow when the diode is reverse biased and not enough current can flow. In addition, the diode also has a high reverse breakdown voltage due to the fact that the avalanche region becomes very small which prevents large amounts of current from flowing.

The BAS70LT1G is an essential component in many electronic applications. Its low forward voltage drop and low power dissipation makes it ideal for use in a wide range of applications. This diode is easy to use and has a long service life, making it the perfect choice for automotive and consumer electronics applications. In addition, its reverse leakage and reverse breakdown voltage also make it an ideal choice for use in power supplies, switching applications, and AC-DC rectification.

The specific data is subject to PDF, and the above content is for reference