BAS70-00-HE3-08 Allicdata Electronics

BAS70-00-HE3-08 Discrete Semiconductor Products

Allicdata Part #:

BAS70-00-HE3-08GITR-ND

Manufacturer Part#:

BAS70-00-HE3-08

Price: $ 0.05
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE SCHOTTKY 70V 200MA SOT23
More Detail: Diode Schottky 70V 200mA Surface Mount SOT-23
DataSheet: BAS70-00-HE3-08 datasheetBAS70-00-HE3-08 Datasheet/PDF
Quantity: 12000
3000 +: $ 0.04445
6000 +: $ 0.04001
15000 +: $ 0.03556
30000 +: $ 0.03334
75000 +: $ 0.02964
Stock 12000Can Ship Immediately
$ 0.05
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 70V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA
Speed: Small Signal =
Reverse Recovery Time (trr): 5ns
Current - Reverse Leakage @ Vr: 100nA @ 50V
Capacitance @ Vr, F: 2pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Operating Temperature - Junction: 125°C (Max)
Description

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BAS70-00-HE3-08 is a type of single rectifier diode, which is widely used in high-frequency bridge circuits, motor control, switching power supplies and signal processing circuits. It is well-known that rectifier diode is a two-terminal device that passes current in one direction only, allowing it to be used to convert AC to DC and to rectify signals.

Specifically, BAS70-00-HE3-08 diode is an ultra-fast, low voltage rectifier diode in an SOD-882 package. It is made of schottky barrier diode as the material of the junction, with an advanced optical chip embedded, and is featured by a rated current of 70 mA, a forward voltage drop of 0.35 - 0.37 V and a breakdown voltage of 80 V. Compared to other rectifier diodes, BAS70-00-HE3-08 diode has a low forward voltage drop, making it suitable for downstream power applications with tight regulation requirements, such as LCD flat panel displays, LED backlight, automotive electronics, PC servers and other power supplies.

The working principle of BAS70-00-HE3-08 is pretty simple. It consists of two semiconductor layers. One layer is made of p-type material, which creates a low resistance path for electrons flow, and the other layer is made of n-type material, which creates a high resistance path for holes flow. When the diode is connected in the circuit, it will form a depletion region between two layers, acting as a barrier for electrons flow, allowing electrons to only pass through in one direction.

In conclusion, BAS70-00-HE3-08 is an ideal choice for single rectifier diode application due to its low forward voltage drop, fast switching speed and low power consumption. It is widely used in high-frequency bridge circuits, motor control, switching power supplies and signal processing circuits. By understanding the working principle of diode and making proper selection, designers are enabled to optimize the performance of their application.

The specific data is subject to PDF, and the above content is for reference

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